4. I-V Characteristics of NMOS device: The following graph shows the I-V characteristics of an NMOS device. Answer the following questions: A. Find out the three regions of operation (linear, saturation and cut-off) of the following graph and give a brief explanation of them by using the different operating modes (accumulation, depletion and inversion). B. In the graph, the saturation voltages from drain-to-source increase with increasing gate-to-source voltages. Give a brief explanation of why: Vds(sat,A)

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4. I-V Characteristics of NMOS device: The following graph shows the I-V characteristics of
an NMOS device. Answer the following questions:
A. Find out the three regions of operation (linear, saturation and cut-off) of the following graph
and give a brief explanation of them by using the different operating modes (accumulation,
depletion and inversion).
B. In the graph, the saturation voltages from drain-to-source increase with increasing
gate-to-source voltages. Give a brief explanation of why:
Vds(sat,A)<Vds(sat,B)<Vds(sat,C)
Ids (HA)
150
A, B and C are the saturation points
of drain-to-source current.
C
Vas = 1.0
100
B
Vgs = 0.8
50
Vgs = 0.6
Vas = 0.4
Vds
0.2
0.4
0.6
0.8
1
Figure: NMOS I-V Characteristics
Transcribed Image Text:4. I-V Characteristics of NMOS device: The following graph shows the I-V characteristics of an NMOS device. Answer the following questions: A. Find out the three regions of operation (linear, saturation and cut-off) of the following graph and give a brief explanation of them by using the different operating modes (accumulation, depletion and inversion). B. In the graph, the saturation voltages from drain-to-source increase with increasing gate-to-source voltages. Give a brief explanation of why: Vds(sat,A)<Vds(sat,B)<Vds(sat,C) Ids (HA) 150 A, B and C are the saturation points of drain-to-source current. C Vas = 1.0 100 B Vgs = 0.8 50 Vgs = 0.6 Vas = 0.4 Vds 0.2 0.4 0.6 0.8 1 Figure: NMOS I-V Characteristics
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