Consider a MOS device with a p-type silicon substrate with N₁ = 1 X 10¹4 cm-³. The oxide Na thickness, tox, is 20 nm and the equivalent oxide charge Qs = 4 X 10-10 C/cm2². Use the SS figure above to find the metal-semiconductor work function differences and use them to find the threshold voltage for an aluminum gate. VT=0.882 V O VT=0.378 V O VT= -0.990 V O VT= -0.205 V

Consider a MOS device with a p-type silicon substrate with N₁ = 1 X 10¹4 cm-³. The oxide Na thickness, tox, is 20 nm and the equivalent oxide charge Qs = 4 X 10-10 C/cm2². Use the SS figure above to find the metal-semiconductor work function differences and use them to find the threshold voltage for an aluminum gate. VT=0.882 V O VT=0.378 V O VT= -0.990 V O VT= -0.205 V

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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