Answers can be found at www.pearsonhighered.com/floyd.1. The JFET is(a) a unipolar device(b) a voltage-controlled device(c) a current-controlled device(d) answers (a) and (c)(e) answers (a) and (b)2. The channel of a JFET is between the(a) gate and drain(b) drain and source(c) gate and source(d) input and output3. A JFET always operates with(a) the gate-to-source pn junction reverse-biased(b) the gate-to-source pn junction forward-biased(c) the drain connected to ground(d) the gate connected to the source4. For VGs = 0 V, the drain current becomes constant when Vps exceeds(a) cutoff(b) VDD(c) Vp(d) 0 V5. The constant-current region of a FET lies between(a) cutoff and saturation(b) cutoff and pinch-off(c) 0 and Ipss(d) pinch-off and breakdown6. Ipss is(a) the drain current with the source shorted(b) the drain current at cutoff(c) the maximum possible drain current(d) the midpoint drain current7. Drain current in the constant-current region increases when(a) the gate-to-source bias voltage decreases(b) the gate-to-source bias voltage increases(c) the drain-to-source voltage increases(d) the drain-to-source voltage decreases

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1. The JFET is (a) a unipolar device (b) a voltage-controlled device (c) a current-controlled device (d) answers (a) and (c) (e) answers (a) and (b) 2. The channel of a JFET is between the (a) gate and drain (b) drain and source (c) gate and source (d) input and output 3. A JFET always operates with (a) the gate-to-source pn junction reverse-biased (b) the gate-to-source pn junction forward-biased (c) the drain connected to ground (d) the gate connected to the source 4. For VGS = 0 V, the drain current becomes constant when VDs exceeds (a) cutoff (b) VDD (c) Vp (d) 0 V 5. The constant-current region of a FET lies between (a) cutoff and saturation (b) cutoff and pinch-off (c) 0 and Ipss (d) pinch-off and breakdown 6. Ipss is (a) the drain current with the source shorted (b) the drain current at cutoff (c) the maximum possible drain current (d) the midpoint drain current 7. Drain current in the constant-current region increases when (a) the gate-to-source bias voltage decreases (b) the gate-to-source bias voltage increases (c) the drain-to-source voltage increases (d) the drain-to-source voltage decreases

1. The JFET is (a) a unipolar device (b) a voltage-controlled device (c) a current-controlled device (d) answers (a) and (c) (e) answers (a) and (b) 2. The channel of a JFET is between the (a) gate and drain (b) drain and source (c) gate and source (d) input and output 3. A JFET always operates with (a) the gate-to-source pn junction reverse-biased (b) the gate-to-source pn junction forward-biased (c) the drain connected to ground (d) the gate connected to the source 4. For VGS = 0 V, the drain current becomes constant when VDs exceeds (a) cutoff (b) VDD (c) Vp (d) 0 V 5. The constant-current region of a FET lies between (a) cutoff and saturation (b) cutoff and pinch-off (c) 0 and Ipss (d) pinch-off and breakdown 6. Ipss is (a) the drain current with the source shorted (b) the drain current at cutoff (c) the maximum possible drain current (d) the midpoint drain current 7. Drain current in the constant-current region increases when (a) the gate-to-source bias voltage decreases (b) the gate-to-source bias voltage increases (c) the drain-to-source voltage increases (d) the drain-to-source voltage decreases

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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