**Text Transcription for Educational Website:**In one of the most recent silicon industry achievements of 2021, a single transistor takes up a rectangular area on a microchip that measures 10 [nm] by 20 [nm]. The early microchips in the 1970's had rectangular transistors that each measured approximately 20 [μm] by 40 [μm]. How many of the new 2021 transistors could fit inside the same area of a single 1970 transistor?A) 400 B) 4000 C) 40,000 D) 400,000 E) 4,000,000 **Explanation of Concepts:**- **Transistor Size Comparison:** The problem compares the area occupied by transistors from two different eras, 2021 and the 1970s, by using their respective dimensions. - **Measurement Units:** - 2021 transistor dimensions: 10 nanometers (nm) by 20 nanometers (nm). - 1970s transistor dimensions: 20 micrometers (μm) by 40 micrometers (μm).- **Unit Conversion:** To accurately compare the transistor areas, it's essential to convert all measurements to the same units. Note: 1 micrometer (μm) = 1,000 nanometers (nm).- **Area Calculation:** - **2021 transistor area:** \(10 \, \text{nm} \times 20 \, \text{nm} = 200 \, \text{nm}^2\) - **1970s transistor area:** After converting dimensions into nanometers, \( (20,000 \, \text{nm}) \times (40,000 \, \text{nm}) = 800,000,000 \, \text{nm}^2 \)- **Comparison:** - The number of 2021 transistors that fit into a 1970s transistor is calculated by dividing the 1970s transistor area by the 2021 transistor area: \[ \frac{800,000,000 \, \text{nm}^2}{200 \, \text{nm}^2} = 4,000,000 \]Thus, the answer is **E) 4,000,000**.

2) In one of the most recent silicon industry achievements of 2021, a single transistor takes up a rectangular area on a microchip that measures 10[nm] bv 20[nm]. The early microchips in the 1970's had rectangular transistors that each measured approximately 20[um] by 40[um]. How manv of the new 2021 transistors could fit inside the same area of a single 1970 transistor? A) 400 B) 4000 C) 40,000 D) 400,000 É 4,000,000

2) In one of the most recent silicon industry achievements of 2021, a single transistor takes up a rectangular area on a microchip that measures 10[nm] bv 20[nm]. The early microchips in the 1970's had rectangular transistors that each measured approximately 20[um] by 40[um]. How manv of the new 2021 transistors could fit inside the same area of a single 1970 transistor? A) 400 B) 4000 C) 40,000 D) 400,000 É 4,000,000

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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3. Determine the following values based on the figure shown below of an NPN Si BJT, where NE 5×10¹8, NB= 10¹7, and Nc= 2×10¹6 cm³. Assuming the transistor is operated in the active mode with VBE=0.83 V. (a) Determine np(0) and pn(0). (b) If the effective base width W is 80 Å, D₂= 25 cm²/s, and the intrinsic emitter area is 0.5 mm², determine the total collector current. (c) If the current gain ß= 150, determine the base and emitter current. Carrier concentration Pao Emitter (n) Hole concentration EBJ depletion. region Pr (0) (0) 11 Base (p) Electron concentration np (ideal) n (with recombination) Effective base width W CBJ depletion region Collector (n) Distance (x)
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1. With rise in temperature the electrical conductivity of intrinsic semiconductor: a. Increase b. decrease c. Increase and then decrease d. decrease and then Increase 2. In a semiconductor a. There are no free electrons at any temperature b. There are no free electrons at 0K c. Number of free electrons more than that d. None of the above 3.Which of the following characteristics of electrons determines the current in a conductor? (a) Drift velocity alone. (b) Thermal velocity alone. (c) Both drift velocity and thermal velocity. (d) Neither drift nor thermal velocity. 4.If the electric current in a coil is doubled the magnetic flux density a) halves b) remains unchanged c) doubles d) quadruples
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4--N MOSFETs are used in the given circuit. Q1, Q2,….. The parameters of Qn MOS transistors are Vt=1V, γ=0, λ=0,μnCox=200μA/V2 and (W/L)1= (W/L) 2=….=(W/L)n=20 a) VGS=?, ID=?, gm=? b) Find the input and output impedance. c) Find the voltage gain.SOLVE IT IN DETAIL.
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3. How many electrons in one bit? Do an order of magnitude estimate of a transistor (say, 5nm long gate, 10nm deep into the silicon, 1um wide. See the illustration above) You may assume each silicon atom contributes one electron.