Assume that at T-300 K, the electron mobility in a silicon sample is 1300 cm²/Vs If an electric field of 100 V/cm is applied what is the excess energy of the electrons? How does this excess energy compare with the thermal energy? If you assume that the mobility is unchanged how does the same comparison work out at a field of 5 V/cm. (NOTE: Excess energy is equal to ½ m* v‹² where Vå is the drift velocity.)

Assume that at T-300 K, the electron mobility in a silicon sample is 1300 cm²/Vs If an electric field of 100 V/cm is applied what is the excess energy of the electrons? How does this excess energy compare with the thermal energy? If you assume that the mobility is unchanged how does the same comparison work out at a field of 5 V/cm. (NOTE: Excess energy is equal to ½ m* v‹² where Vå is the drift velocity.)