he figure given below represents the energy-band diagram in the p-type semiconductor of a OS capacitor, indicating surface potential as 0.254 V and the space charge width is 0.30 μm. hen the acceptor doping concentration is Assume & 11.7 & 8.85 x 10-14 F/cm). x 1015 cm-3. = = 0.254 V oxide -xd 0.30 um p-type Ec Efi EF E

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The figure given below represents the energy-band diagram in the p-type semiconductor of a
MOS capacitor, indicating surface potential as 0.254 V and the space charge width is 0.30 µm.
Then the acceptor doping concentration is
x 10¹5 cm-3.
(Assume Esi = 11.7 &&0
8.85 x 10-14 F/cm).
Os
= 0.254 V
oxide
Xd
0.30 μm
p-type
E
Efi
EF
MM
Ev
Transcribed Image Text:The figure given below represents the energy-band diagram in the p-type semiconductor of a MOS capacitor, indicating surface potential as 0.254 V and the space charge width is 0.30 µm. Then the acceptor doping concentration is x 10¹5 cm-3. (Assume Esi = 11.7 &&0 8.85 x 10-14 F/cm). Os = 0.254 V oxide Xd 0.30 μm p-type E Efi EF MM Ev
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