When the ions at their equilibrium interionic separation, the force of attraction between a divalent (valency of 2) cation and a monovalent (valency of 1) anion is 7.32 × 10−9 N. If the ionic radius of the cation is 0.05 nm, what is the anion radius (nm)? Round your result to 2 decimal place.

When the ions at their equilibrium interionic separation, the force of attraction between a divalent (valency of 2) cation and a monovalent (valency of 1) anion is 7.32 × 10−9 N. If the ionic radius of the cation is 0.05 nm, what is the anion radius (nm)? Round your result to 2 decimal place.

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 58P: The measured density of a CsCl crystal is 3.988 g/cm3. What is the equilibrium separate distance of...

See similar textbooks

Related questions

Q: Q 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd…

Q: 10. The capacitance of a Au-n-GaAs Schottky-barrier diode is given by the relation 1/C² = 1.57x1015…

Q: : If you know that the zener voltage at a temperature of 25C is equal to (16V), calculate the…

Q: Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration…

A: Given:- intrinsic carrier concentration ( ni ) = 1 x 1016 electron/m3 The doping concentration (…

Q: Find the diffusion coefficients of holes and electrons for germanium at 290.25K. The carrier…

A: Diffusion coefficient of electrons is, De=μekTe=5050 cm2/V-s1.38×10-23 J/K290.25 K1.6×10-19…

Q: A germanium diode is used to detect radiation with energy of 1.6 MeV. To do so, the anode (positive…

Q: What is the hole diffusion constant (cm2/s) in a piece of silicon doped with 3x1015cm-3 of donors…

Q: › Considering the diamond structure, what is the number of atoms per cell? Show that the packing…

A: The space lattice of a diamond is face-centered cubic. In the diamond crystal structure, there is…

Q: Calculate the radius of a nickel atom in cm, given that Ni has an FCC crystal structure, a density…

Q: In a p-n junction diode, the current I can be expressed as eV 1=1, exp 2k„T where I, is called the…

A: In the given question , We have to determine the forward current at a given forward voltage.

Q: Determine the thermal-equilibrium concentrations of electrons and holes in silicon at T = 300 K if…

Q: Calculate the space width for a p-n junction when a reverse bias with 3V is applied at T=350K.…

A: The total space width for a p-n junction when reverse bias voltage is applied is given the following…

Q: Consider silicon at T=300 k. A Hall Effect device is fabricated with the following parameters:…

A: The hall effect determines the behaviour of the free charge carriers in a semiconductor when the…

Q: A hypothetical NH molecule makes a rotational-level transition from I= 3 to l = 1 and gives off a…

Q: Would you expect superconductivity from a "glass" with no or little crystal structure? If not, why…

A: Now from the definition of superconductivity when the resistivity of a material becomes suddenly…

Q: In the circuit below, we would like to bias the transistor such that it operates in the active…

A: We are given that: IC=1 mA= 1×10-3A VBE=0.7 V β=100

Q: Q1. T= 300K. Use n, = 1 x 101 cm. %3D A silicon sample doped with ND=4 x 1015 cm , and NA=2 x 10 cm.…

A: “Since you have posted a question with multiple sub-parts, we will solve first three subparts for…

Q: Suppose a pure Si crystal has 5 × 1028 atoms m-3. It is doped by 1 ppm concentration of pentavalent…

A: Given: Number of Si crystal, n = 5 × 1028 atoms m-3 Dopping = 1 ppm = 10-6 ni =1.5 × 1016 m-3.

Q: Sample of Ge of volume (=1 cm³) contains about 3 x1014 free electrons, and 3x10¹3 holes, doping…

Q: tron in the valence band over the range E,- 2kT eV< beng emply by an el E< E. 3.35 The probability…

A: In this question we have been given several questions and we will answer these questions in the next…

Q: The same kind of semiconducting material used to make an LED can also be used to convert absorbed…

Q: Calculate the drift current density in (mA/m2) for the silicon at room temperature. If the intrinsic…

A: First of all, we have to write down the given conditions, ni = 2×1016 electrons/m3Np = 3×1016…

Q: What is the number of occupied states in the energy range of 0.0300 eV that is centered at a height…

Q: The value of the collector resistor in an npn silicon transistor amplifier with Bdc= 250, VBB= 2.5…

A: For NPN transistor amplifier β=ICIB IB=VBB-VBERB IC=VCC-VCERC

Q: Fou are given a GAs semiconductor sample and asked to design a PIN photo-detector for macimum…

A: This question can be solved by applying the basic concepts of optoelectronics.

Q: Consider a silicon pn junction at T 300K with acceptor doping concentrations of 10t cm- and donor…

Q: Sample of Ge of volume (-1 cm) contains about, 3 x104 free electrons, and 3x10 holes, doping donates…

Q: Consider a silicon pn junction at T 300 Kwith an acceptor doping concentration (1x 1018cm-3) and a…

A: Given:- T= 300 K Na= 10^18 cm-3 Nd= 10^15 cm-3 Ni= 1.5×10^10 cm-3 Calculating VT:- VT= KT/e =…

Q: A CO molecule is initially in the n = 2 vibrational level. If this molecule loses both vibrational…

A: energy of a vibrating rotatorisEnI=(n+12)hωosc+I(I+1)h28π2I'..........(1)ωosc=12πKm............(2)we…

Q: What is the probability that, at a temperature of T = 300 K, an electron will jump across the energy…

Q: ) Consider the circuit as shown below, assume that all inputs are 0 during the pre-charge phase and…

A: Answer for part a and b:

Q: However, the molecule we can encounter everyday continuously vibrates and interact with the…

Q: Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K.…

A: Calculate the donor and acceptor concentrations in the semiconductor. The concentration of the…

Q: The value of the collector resistor in an npn silicon transistor amplifier with Bdc= 250, VBB= 2.5…

A: Solution: (i) Calculate the base current. IB=VBB-VBERB Substitute 0.7V for VBE, 2.5V for VBB, 100kΩ…

Q: In the motion of a diatomic molecule, the molecule oscillates as if there's a spring connecting the…

Q: A silicon p-n junction (n = 1010 cm-3, Na = 1017 cm-3 and Na = 4 x 1016 cm3) is biased with an…

Q: Compute the magnitude of the electrostatic attraction energy between a silver cation (radius 129 pm)…

Q: Find the position of the intrinsic Fermi level with respect to the center of the bandgap in Germinum…

Q: in a p type germanium ni=2.1×10^19m^-3 denisty of baran 4.5^23 atoms/m^3 the electron nd holes…

A: The expression for the conductivity before the addition of boron atoms, σ=nieμe+μn Substitute,…

Q: An n-type Si wafer has been doped uniformly with 10 cm³ antimony (Sb) atoms. Calculate the position…

Q: Find the values of n, per cubic centimeter for silicon [E=1.12 eV] at T= 300 energy is 0.22 eV above…

A: Given:- Eg = 1.12 eV at T = 300 K if the fermi energy Eg = 0.22 eV above the balance band energy.…

Q: .A transistor with a 0.98 is operated as an amplifier in a common base circuit with a load…

Q: Calculate the probability that an energy state in the valence band at E=E-kT is empty of an electron…

A: The Fermi function: fE=11+ e(E−EF)kT Where EF is fermi energy The Fermi function gives the…

Q: At 25°C, the electrical resistivity of an intrinsic Gallium Arsenide (GaAs) is 0.042 ohms.cm and the…

A: The electrical conductivity of GaAs at 25oC can be determined as, Here, ρ represents the electrical…

Q: Consider a silicon pn junction at T = 300 K with an acceptor doping concentration (1 x 101cm-3) and…

A: Write the expression for the built-in potential barrier. Here, k represents the Boltzmann constant,…

Q: Find the resistivity of p-type silicon with NA = 10^15/cm3 at T300K. Assume that for intrinsic…

Question

When the ions at their equilibrium interionic separation, the force of attraction between a divalent (valency of 2) cation and a monovalent (valency of 1) anion is 7.32 x 10-9 N. If the ionic radius of
the cation is 0.05 nm, what is the anion radius (nm)?
Round your result to 2 decimal place.

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

This is a popular solution!

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step 3

VIEW

Trending now

This is a popular solution!

Step by step

Solved in 3 steps with 2 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, physics and related others by exploring similar questions and additional content below.

Similar questions

In solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.
The force of attraction between a divalen cation and a divalen anion is 2.60 x 10^-8 Newtons. If the ionic radius of the cation is 0.067 nm, waht is the anion radius?
The potential energy of a system of two atoms is given by the relation U =-A/r + B/r10 A stable molecule is formed with the release of 8 eV energy when the interatomic distance is 2.8 Å. Find A and B and the force needed to dissociate this molecule into atoms and the interatomic distance at which the dissociation occurs.
The ionic crystal of NaCl has an fcc structure as shown below with the position of the Cl atom located at : (0 0 0); (½ ½ 0); ( ½ 0 %) and (0 ½) and Na atom is located at : (½ ½½) + fcc translation. The following are the physical data of NaCl: - Ionic radius Na = 0.98 A, Cl ion radius 1.81 A Atomic mass of Na = 22.99 amu, Atomic mass of Cl = 35.45 amu NaCl bulk modulus = 2.40 x 1010 N/m - Madelung's constant = 1.75 Young's modulus in the direction [100] = 5 x 1010 Nm-2 Debye temperature = 281 K - State the structural factors of NaCl, F in fNa and fCl (f = atomic scattering factor). Also determine the condition (h k 1) so that the value of F = 0.
Silicon is doped with phosphorus atoms (column V of Mendeleev table) with a concentration of 1018 cm-3 a- What is, at 27 °C, the electron density in doped Si. Use this result to derive the hole density. Which type of semiconductor is obtained? b- Calculate, at 27 °C, the position of the Fermi level EF and plot the band diagram.
= Consider a silicon pn junction diode at T 300K. The reverse saturation current is ls 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.685 V and use that to determine the DC and AC resistance of the diode. RDC = 307 Q2 = rac =7Ω RDC = 224 22 rac 8 Ω RDC = 115 Q2 = rac = 40 RDC = 36 Q rac = 10
A sample of copper has a mass of 10.68 g when measured in air. It has a mass of 9.47 g when measured in water. Answer these three questions: How many atoms are in the sample? What is the simple volume of the space including and surrounding each atom? Assume the atoms are evenly distributed throughout the sample. That is no FCC, BCC, or HCP crystal structure. What is the diameter of each atom?
1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).
Silicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?
Calculate the radius of a nickel atom in cm, given that Ni has an FCC crystal structure, a density of 7.982 g/cm³, and an atomic weight of 58.69 g/mol.
The atomic radius of an iron atom is (1.238 nm). Iron crystallizes as BCC. Calculate the: 1- lattice parameter of the unit cell, 2- How many atoms are contained within the BCC unit cell
Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The hole concentration?