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- In the transistor circuit on the sideMaximum values are given below. Normalmaximum VCC voltage of the BJT under conditionscalculate. Pd max = 07/100 W Vce max = 20V Ic max = 100mA Bdc = 150For faithful amplification by a transistor circuit, the value of VCE Should transistor for silicon А. Вe zero В. Ве 0.01V C. Not fall below 0.5 V D. Be abvove 1V D В АAn apa transistor is accidentally connected with col-lector and emitter leads interchanged. The resulting currents in the normal emitter and base leads are 0.5 mA and I mA, respectively. What are the values of as and fa?
- Consider an NMOS transistor fabricated in a 0.18-μm process with L = 0.18 μm and W = 2 μm.The process technology is specified to have Cox = 8 fF/μm2, μn = 450 cm2/V.s and Vtn= 0.55V.(b) If VGS is kept constant, find VDS that results in ID= 50 μA.Assume you are to create n+pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 1018 /cm3, 7/cm3, and 5 1016/cm3, for emitter, base and collector regions, respectively. You also know Ln = 10 μm, Lp = 4 μm, μn = 1600 cm2/Vs, μp = 600 cm2/Vs, ni = 1,5 1010 1/cm3, q = 1,602 10-19 C, er = 12, eo = 8,85 10-12 F/m, VT = 25 mV. Calculate barrier potential for EB junction.1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp 0.1 us NE 1019 сті Emitter concentration — 10 ст2/s -3 Dn = Dp NB 3D 1016 ст Base concentration Nc 1019 ст -3 = Collector concentration WE 3 µm Emitter width W 1.5 um Metallurgical base width, i.e. the distance between base-emitter junction and base-collector junction A = 10-5 cm² = Cross-sectional area If VCB = 0 V and VEB = 0.6 V, calculate the following: ЕВ a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.
- Assume you are to create n+pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 1018 /cm3, 6.2/cm3, and 5 1016/cm3, for emitter, base and collector regions, respectively. You also know Ln = 10 μm, Lp = 4 μm, μn = 1600 cm2/Vs, μp = 600 cm2/Vs, ni = 1,5 1010 1/cm3, q = 1,602 10-19 C, er = 12, eo = 8,85 10-12 F/m, VT = 25 mV. What is the minimum VCE for operation in active mode assuming hFE = β is very large?An abrupt uniformly doped silicon pn junction is reversed biased by Vg= 20 V. If Na(in n-side)=10" cm, N,(in p-side)=10" cm then the junction capacitance is 20 pF. The junction capacitance if Na(in n-side) increased to 3x10" cm' is equal to ....pF. a) 9 b)21 c)35 d) 52 e) 87In the circuit shown in the picture, the sum of the tlh time of the transition transistor and the propogation time of the inverter behind it is 500 ns. So what should the (W / L) G ratio be?
- The output characteristics of a transistor in common-emitter configuration can be regarded as straight lines connecting the following points 田 IB = 20 μΑ 50 μΑ 80 μΑ VCE(V) 1.0 8.0 1.0 8.0 1.0 8.0 Ic (mA) 1.2 1.4 3.4 4.2 6.1 8.1 Plot the characteristics and superimpose the load line for a 1 k load, given that the supply voltage is 9V and the d.c. base bias is 50 µA. The signal input resistance is 800 Q. When a peak input current of 30 HA varies sinusoidally about mean bias of 50 HA, determine (a) The quiescent collector current (b) The current gain (c) The voltage gain (d) The power gain(a) A forward-bias voltage of 15.0 mV produces a positive current of 9.25 mA through a p-n junction at 300 K. What does the positive current become if the forward-bias voltage is reduced to 10.0 mV? (b) For reverse-bias voltages of -15.0 mV and -10.0 mV, what is the reverse-bias negative current?For a transistor, the current amplification factor is 0.8. The transistor is connected in common emitter configuration. The change in the collector current when the base current changes by 6 mA is (A) 6 mA (B) 4.8 mA (C) 24 mA (D) 8 mA