Silicon is doped with phosphorus atoms (column V of Mendeleev table) with a concentration of 1018 cm-3 a- What is, at 27 °C, the electron density in doped Si. Use this result to derive the hole density. Which type of semiconductor is obtained? b- Calculate, at 27 °C, the position of the Fermi level EF and plot the band diagram.

Silicon is doped with phosphorus atoms (column V of Mendeleev table) with a concentration of 1018 cm-3 a- What is, at 27 °C, the electron density in doped Si. Use this result to derive the hole density. Which type of semiconductor is obtained? b- Calculate, at 27 °C, the position of the Fermi level EF and plot the band diagram.

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter10: Statistical Physics

Section: Chapter Questions

Problem 14P

See similar textbooks

Similar questions

To obtain a more clearly defined picture of the FermiDirac distribution, consider a system of 20 FermiDirac particles sharing 94 units of energy. By drawing diagrams like Figure P10.11, show that there are nine different microstates. Using Equation 10.2, calculate and plot the average number of particles in each energy level from 0 to 14E. Locate the Fermi energy at 0 K on your plot from the fact that electrons at 0 K fill all the levels consecutively up to the Fermi energy. (At 0 K the system no longer has 94 units of energy, but has the minimum amount of 90E.) 1 Microstate8 others? One of the nine equally probable microstates for 20 FD particles with a total energy of 94E.
Q1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet m2 and 0.18 V. Sec m2 the mobility of electron and hole are 0.38 respectively. V. Sec Find the conductivity of pure Ge semiconductor.
Grüneisen parameter for silicon The silicon crystal (diamond structure) has the following properties at 500 K. The lattice parameter (a) = 0.5440 nm, thermal expansion coefficient (a) = 3.6x106 K-', and the bulk modulus is about the same as that at room temperature (K = 99 GPa). The Debye temperature of Si is 625 K. At room temperature (300 K) its density is 2.33 g cm³, and its lattice constant is 0.5430 nm. Calculate the Grüneisen parameter at 500 K and compare with its value at room temperature in Table 1. Is 3 constant?
Q3/ An experiment was conducted to find the relationship between the specific heat of potassium metal and the temperature, and it was found that this relationship takes the following formula at low temperatures 2.08 +2.57 T2 What is the value of each of: (1) the fermi temperature of potassium? (b) Debye temperature of potassium? Note that specific heat is measured in units of mj / mol / K.
A semiconductor Hall probe has a Hall coefficient (RH) of -3.75 x 105 m³/C in the temperature range of 130 K and 350 K. Its electrical conductivity is 150 (2.m)-¹. A. Deduce, with explanation, the type of carriers in the semiconductor B. Calculate the density and mobility of the charge carriers C. Give 2 examples of Hall probe application and 2 material fabrication methods for Hall effect proves.
Suppose you need to design an n-type silicon semiconductor with a conductivity of 160 (N ·m)-1 at 300K. The atomic weight of silicon is 28.09 g/mol, and the density is 2.33g/cm³. The mobility of electrons/holes in silicon at different doping concentrations under different temperature is shown in the following figure. 0.1 102 102 10, 10 0.01 0.01 A kgou ao
A20. An intrinsic silicon semiconductor is uniformly doped with acceptors to a level of 2x1017 cm-³. At room temperature, the electron concentration in this semiconductor is found to be 5x10² cm-3. What is the intrinsic carrier concentration of this semiconductor at room temperature and describe qualitatively how would the electron concentration change if the temperature increased slightly?
The Fermi-Dirac statistic describes the probability of occupation of an energy state E, as a function of temperature and of the parameter Ef, the Fermi energy.a) What is the physical interpretation for the result obtained when E = Ef?b) Under which conditions of temperature and position of the Fermi level, Ef, can the Fermi-Dirac statistic be written as a simple exponential? Justify your answer.
To improve the semiconducting characteristics of GaAs, 1.31 x 10^15 atoms of Be are incorporated into the material. Be has an ionization energy of 0.6eV. In this doping process, is Be totally ionized or not? Display your proof. After the doping process, where can you find the Fermi energy level?
Q2. Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in Si is D = 6.5 x 10-11 mm2/s at a temperature of 950°C. Assume the source provides a surface concentration of 1020 atoms/cm3 and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 1018 atoms/cm3.
a) If the electron concentration increase along the x-axis of a conductor as shown in equation below: n=3-1030x2+2- 102x+1026 And D=1.2 x 10-4 m/s. Find the diffusion current at x =Smm? b) Find the minimum electron concentration nmin in semiconductor?
b) Find Ef in terms of N and V.e) What is the pressure at tje Fermi gas at T=0 K. ?