Engineering Electromagnetics
Engineering Electromagnetics
9th Edition
ISBN: 9780078028151
Author: Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher: Mcgraw-hill Education,
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Chapter 5, Problem 5.24P

At a certain temperature, the electron and hole motilities in intrinsic germanium are given as 0.43 and 0.21 m2/V.s, respectively. If the electron and hole concentration are both 2.3Ă—1019 m-3, find the conductivity at this temperature.

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(1-7) Find the concentration of holes and electrons in a p-type Germanium at 300 k, if the conductivity is 100 per ohm per cm. Also find these values of N- type Silicon, if the conductivity of 0.1 per ohm per cm .given for Germanium n-2.5×1013/cm³ Hn=3800 cm2/v-s, up=1800 cm?/v-s, and for Silicon n=1.5x101%cm', Hn=1300 cm²/v-s, µp=500 cm²/v-s
7. A diode conducts 1mA at 20°C. If it is operated at 100°C, what will be the current? Given data: n=1.74 and NTC value = 2.2mV/°C.
A simple p*n junction is designed to work as IMPATT diode. The doping concentrations in the p* layer is 1019 cm-3 while the doping in the n-layer is 0.7 x1016 Calculate the peak electric field if the breakdown voltage is 80 V and the dielectric constant is 11.9. Express your answer in the unit of kV/cm. cm-3

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