Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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Chapter 3, Problem 56P
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Figure Q4 shows the silicon wafer. This silicon has been added with the two elements as listed in Table Q3. Identify the majority charge carrier in each extrinsic silicon wafer and justify your answer with illustrations.
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Chapter 3 Solutions
Introductory Circuit Analysis (13th Edition)
Ch. 3 - Convert the following to mils: 0.2Â in. 1/32Â in....Ch. 3 - Calculate the area in circular mils (CM) of wires...Ch. 3 - Prob. 3PCh. 3 - What is the resistance of a copper wire 200 ft...Ch. 3 - What is the area in circular mils of an aluminum...Ch. 3 - A 2.2 resistor is to be made of nichrome wire. If...Ch. 3 - What is the diameter in inches of a copper wire...Ch. 3 - A wire 1000 ft long has a resistance of 0.5 and an...Ch. 3 - A contractor is concerned about the length of...Ch. 3 - What is the cross-sectional area in circular mile...
Ch. 3 - Prob. 11PCh. 3 - Determine the increase in resistance of a copper...Ch. 3 - What is the new resistance level of a copper wire...Ch. 3 - In construction the two most common wires employed...Ch. 3 - Compare the area of a #12 wire with the area of a...Ch. 3 - Compare the area of a #20 hookup wire to a #10...Ch. 3 - For the system in Fig. 3.46, the resistance of...Ch. 3 - From Table 3.2, determine the maximum permissible...Ch. 3 - The resistance of a copper wire is 2 at room...Ch. 3 - The resistance of an aluminum bus-bar is 0.02 at...Ch. 3 - The resistance of a copper wire is 1.2 at room...Ch. 3 - The resistance of a copper wire is 25m at a...Ch. 3 - The resistance of a copper wire is 1 at 20C (room...Ch. 3 - If the resistance of 1000 ft of wire is about 1 at...Ch. 3 - Verify the value of 20 for copper in Table 3.4 by...Ch. 3 - Prob. 26PCh. 3 - Prob. 27PCh. 3 - A 22 wire-wound resistor is rated at +200PPM for a...Ch. 3 - A 100 wire-wound resistor is rated at +100PPM for...Ch. 3 - What is the approximate increase in size from a 1...Ch. 3 - If the resistance between the outside terminals of...Ch. 3 - If the wiper arm of a linear potentiometer is...Ch. 3 - Show the connections required to establish 4k...Ch. 3 - Find the range in which a resistor having the...Ch. 3 - Find the color code for the following 10%...Ch. 3 - Is there an overlap in coverage between 20...Ch. 3 - Given a resistor coded yellow, violet, brown,...Ch. 3 - How would Fig. 3.26(a) change if the resistors of...Ch. 3 - Find the value of the following surface mount...Ch. 3 - Find the conductance of each of the following...Ch. 3 - Find the conductance of 1000 ft of #12 AWG wire...Ch. 3 - Find the conductance of a 10,20 and 100 resistor...Ch. 3 - The conductance of a wire is 100 S. If the area of...Ch. 3 - Why do you never apply an ohmmeter to a live...Ch. 3 - How would you check the status of a fuse with an...Ch. 3 - How would you determine the on and off states of a...Ch. 3 - How would you use an ohmmeter to check the status...Ch. 3 - Using metric units, determine the length of a...Ch. 3 - Repeat Problem 11 using metric units; that is,...Ch. 3 - If the sheet resistance of a tin oxide sample is...Ch. 3 - Determine the width of a carbon resistor having a...Ch. 3 - Derive the conversion factor between (CM-/ft) and...Ch. 3 - In your own words, review what you have learned...Ch. 3 - Visit your local library and find a table listing...Ch. 3 - Find at least one article on the application of...Ch. 3 - Using the required 1MA/cm2 density level for...Ch. 3 - Research the SQUID magnetic field detector and...Ch. 3 - Find the resistance of the thermistor having the...Ch. 3 - Using the characteristics of Fig. 3.38, determine...Ch. 3 - Referring to Fig. 3.40(a), find the terminal...
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- b) A p-n junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor. (i) With the aid of appropriate diagrams, illustrate the formation of a p-n junction. (ii) Explain the circumstances of the majority carriers in each type of material during the formation of the P-N junction. (ii) Describe depletion region and barrier potential.arrow_forwardWhat are the main components that make up a photoresist? 2. What is a two-component resist? What are the two components? 3. What does the concept of dose involve? 4. What effect does the dose have on the molecular weight of a negativeresist? (Does it cause it to decrease or increase?) 5. Identify one problem that can arise when positive resist is applied to athermally grown oxide wafer (silicon substrate). How can this problembe resolved?arrow_forwardExplain why Silicon and Germanium are the most common semiconductor materials used in Electronics Devices? Give/Enumerate other semiconductor materials except Silicon and Germanium? Explain why they are not used in Electronics Devices. Explain why Covalent Bonding is used in bonding of semiconductor materials. Explain why Semiconductors are Negative Temperature Coefficient materials?arrow_forward
- Q3.C/ The breakdown voltage can be decreased by increasing the: Q3. D/ The junction is in thermal equilibrium when the * Q3. E/ The only parameter that affects the conduction in semiconductors is temperature * O True O False O Conduction is independent of temperature O Other:arrow_forwardElaborate the following with Scientific Reason a. Why Intrinsic Semiconductor materials are the bad conductors of electricity? Elaborate the process to make them full conductors b. Elaborate the concept and importance of Majority Carriers and Minority Carriers inside P-N Junction c. Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement should be taken to remove the depletion zone?arrow_forwardQ3:- A bar of p-type silicon, has a cross-sectional area A = 106 cm? and a length L= 1.2x10-³ cm. For an applied voltage of 4 V, a current of 3 mA is required. What is the required (a) resistance, (b) resistivity, and (c) impurity doping concentration? (d) What is the resulting hole mobility?arrow_forward
- Which of the following statements is false? A. We can create an extrinsic semiconductor materials by adding impurities to an intrinsic semiconductors. B. A pentavalent impurity addition to an intrinsic semiconductor gives N-type semiconductor. C. N-type semiconductor has more holes than the free electrons that contribute to the conduction of current. D. The P-type semiconductors have more holes than the free electrons.arrow_forwardConsider a bar of semiconductor illuminated as shown in Figure P3.1. a. Sketch the concentrations of electrons and holes as functions of position. b. In which direction(s) will the electrons diffuse? Holes? c. In what directions do the electron and hole diffusion currents go? d. Explain why a plot of voltage versus position along the length of the sample is as shown in the figure. Figure P3.1 (х)Лarrow_forwardA p-n junction is an interface or a boundary between two semiconductor material types, namely the p-type and the n-type, inside a semiconductor. (b) (i) With the aid of appropriate diagrams, illustrate the formation of a p-n junction. (ii) Explain the circumstances of the majority carriers in each type of material during the formation of the P-N junction. (iii) Describe depletion region and barrier potential.arrow_forward
- a) With the aid of illustrations and using Silicon, describe what an intrinsic semiconductor material is. (b) With the aid of illustrations and using Silicon, describe what an extrinsic N type semiconductor material is. (c) With the aid of illustrations and using Silicon, describe what an extrinsic P type semiconductor material is. (d) With the aid of illustrations, describe what happens when P and N materials are joined/fused together and what is formed across the join. Then describe and illustrate how the formation at the junction can be controlled. (e) Give clear illustrations of characteristics for GERMANIUM and SILICON DIODES and say what is the threshold value (Vt) for Silicon and Germanium.arrow_forwardA noncontributory semiconductor has some holes in room temperature. What causes these holes?Please select one:a.Valuation electronsb.Dopingc.Free electronsd.Thermal energyarrow_forwardThe linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differarrow_forward
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