College Physics (10th Edition)
10th Edition
ISBN: 9780321902788
Author: Hugh D. Young, Philip W. Adams, Raymond Joseph Chastain
Publisher: PEARSON
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Chapter 29, Problem 25P
To determine
Find the number of electrons excited from valence band to
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The gap between valence and conduction bands in silicon is 1.12 eV. A nickel nucleus in an excited state emits a gamma-ray photon with wavelength 9.31 * 10-4 nm. How many electrons can be excited from the top of the valence band to the bottom of the conduction band by the absorption of this gamma ray?
The gap between valence and conduction bands in diamond is 5.47 eV. (a) What is the maximum wavelength of a photon that can excite an electron from the top of the valence band into the conduction band? In what region of the electromagnetic spectrum does this photon lie? (b) Explain why pure diamond is transparent and colorless. (c) Most gem diamonds have a yellow color. Explain how impurities in the diamond can cause this color.
The forbidden energy bandgap of AIP is
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Oλ = 511 nm
Oλ = 419 nm
O λ = 882 nm
λ = 575 nm
Chapter 29 Solutions
College Physics (10th Edition)
Ch. 29 - Prob. 1CQCh. 29 - Prob. 2CQCh. 29 - Prob. 3CQCh. 29 - Prob. 4CQCh. 29 - Prob. 5CQCh. 29 - Prob. 6CQCh. 29 - Prob. 7CQCh. 29 - Prob. 8CQCh. 29 - Prob. 9CQCh. 29 - Prob. 10CQ
Ch. 29 - Prob. 1MCPCh. 29 - Prob. 2MCPCh. 29 - Prob. 3MCPCh. 29 - Prob. 4MCPCh. 29 - Prob. 5MCPCh. 29 - Prob. 6MCPCh. 29 - Prob. 7MCPCh. 29 - Prob. 8MCPCh. 29 - Prob. 9MCPCh. 29 - Prob. 10MCPCh. 29 - Prob. 1PCh. 29 - Prob. 2PCh. 29 - Prob. 3PCh. 29 - Prob. 4PCh. 29 - Prob. 5PCh. 29 - What is the ratio of the number of different 3d...Ch. 29 - Prob. 7PCh. 29 - Prob. 8PCh. 29 - Prob. 9PCh. 29 - Prob. 10PCh. 29 - For bromine (Z = 35), make a list of the number of...Ch. 29 - (a) Write out the electron configuration (1s2 2s2,...Ch. 29 - Prob. 13PCh. 29 - Prob. 14PCh. 29 - Prob. 15PCh. 29 - Prob. 16PCh. 29 - Prob. 17PCh. 29 - Prob. 18PCh. 29 - Prob. 19PCh. 29 - Prob. 20PCh. 29 - Prob. 21PCh. 29 - Prob. 22PCh. 29 - Prob. 23PCh. 29 - Prob. 24PCh. 29 - Prob. 25PCh. 29 - Prob. 26PCh. 29 - Prob. 27GPCh. 29 - Prob. 28GPCh. 29 - An electron has spin angular momentum and orbital...Ch. 29 - Prob. 30GPCh. 29 - Prob. 31GPCh. 29 - Prob. 32GPCh. 29 - Prob. 33GPCh. 29 - Prob. 34GPCh. 29 - Prob. 35GPCh. 29 - Prob. 36GPCh. 29 - Prob. 37GPCh. 29 - Prob. 38GPCh. 29 - Prob. 39PPCh. 29 - Prob. 40PPCh. 29 - Prob. 41PPCh. 29 - Prob. 42PP
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- The gap between valence and conduction bands in diamond is 5.47 eV.What is the maximum wavelength of a photon that can excite an electron from the top of the valence band into the conduction band? In what region of the electromagnetic spectrum does this photon lie?arrow_forwardProblem 5. Assume that at T=300 K, the electron mobility in a silicon sample is 1300 cm²/Vs. If an electric field of 100 V/cm is applied what is the excess energy of the electrons? How does this excess energy compare with the thermal energy? If you assume that the mobility is unchanged how does the same comparison work out at a field of 5 V/cm. (NOTE: Excess energy is equal to ½ m₂* v² where Va is the drift velocity.)arrow_forwardX. Determine the resistivity of a germanium crystal at 300 K that has the simultaneous presence of (i) donor impurity of 1 in 10' and (ii) acceptor impurity of 1 in 10%. Given data: Atomic concentration in Germanium is 4.4 x 1022 atoms/cm³, n₁ = 2.5 × 10¹3 /cm³, He = 3800 cm² /Vs and h= 180 cm² /V s.arrow_forward
- Silicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?arrow_forward1 A bar of n-type germanium 10mmx1mmx1mm. The electron density in the bar is 7×10²1 m³ and B=0.2 Wb/m². If one millivolt is applied across the long ends of the bar, determine the current through the bar, the Hall coefficient and the Hall voltage. Assume n = 0.39 m²/v.s. Ans: 43.6 μA; 8.9×10-4 m³/C; 7.76 μV.arrow_forwardThe number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes.arrow_forward
- The two nuclei in the carbon monoxide (CO) molecules are 0.1128 nm apart. The mass of the carbon atom is 1.993x10-26 kg. The mass of the oxygen atom is 2.656x10-26 kg. Spectroscopic measurements show that adjacent vibrational energy levels for the CO molecule are 0.269 eV. What is the effective spring constant of the CO molecule? (Give your answer in N/m.)arrow_forwardCalculate the London penetration depth of the electron in the copper metal. The concentration of free electrons in the copper is 8.5x10²³ /m³. (a) 1.8x10 m (b) 0.2x10* m (c) 2.6x10* m (d) 3.4x10 marrow_forwardSilicon atoms with a concentration of 7× 1010 cm³ are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 × 1017 cm-³ and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The electron concentration ?arrow_forward
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