Electrical Engineering: Principles & Applications (7th Edition)
7th Edition
ISBN: 9780134484143
Author: Allan R. Hambley
Publisher: PEARSON
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(b) Draw the ID - VD curves for this MOSFET for ±VD for V₁ = 0 and V₁ = 1 V. VȚ = 1V.
n
V₁ +
p-type
D
ID
V₁
Example 13
The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is
30 mA. Determine VGs at this current level if k = 0.06 × 10-3 A/V² and VȚ is the maxi-
mum value.
6. The MOSFET in the circuit shown has V₁ = 1.5 and k = 100 mA/V².
a.
Determine the drain current.
b. Determine the voltage Vx at node X.
5V
10k
5V
1k
X
50
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- Figure 1 shows the typical output characteristics of MOSFET. Those characteristics show the difference curve of the drain current, Ip, as function of the drain- source voltage, VDs at a given gate-source voltage, VGs. In the Figure 1, it shows that the Ohmic region. What the meaning of the Ohmic region? Explain with necessary example any consequences that will happen for any condition of MOSFET. 360 10 V ev 7V 320 280 Ohmic region + 240 200 160 120 5.5 V- 80 40 2 3 Vos [V] Figure 1 lo [A]arrow_forwardQ9. Determine the mode of operation of a NMOS transistor when its terminal voltages are VGS = 3V, VDs = 1V, and VT = 1V? OFF ---- Saturation Lineararrow_forwardDetermine vo versus v₁ for the circuit shown in Figure 2. Assume that the MOSFET operates in saturation and is characterized by the parameters K and VT. Vs R₁ www Figure 2 wwww RL R₂ wwwww VO Note: assuming the MOSFET works at normal saturation regime and ips= (VDS -VT)²2 K 2arrow_forward
- A certain npn silicon transistor has vBE=0.7 V for iB=0.1 mA at a temperature of 30°C. Sketch the input characteristic to scale at 30°C. What is the approximate value of vBE for iB = 0.1 mA at 180°C? (Use the rule of thumb that vBE is reduced in magnitude by 2 mV per degree increase in temperature.) Sketch the input characteristic to scale at 180°C.arrow_forwardQ1: for a silicon transistor in the figure below = 200 dc {What is the voltage between the collector and emitter VCE, drawing the load line and finding the Q pointarrow_forwardThe PMOSFET in the figure has VTP = - 0.8 V and kp = 0.2 mA/V2, then VS and VSD are:arrow_forward
- d. The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30 mA. Determine VGS at this current level if k = 0.06 x 103 A/V? and VT is the maximum value.arrow_forwardSet up a midpoint bias for a JFET with IDSS = 14 mA and VGS(off) = -10 V. Use a 24 V dc source as the supply voltage. Show the circuit and resistor values. Indicate the value of ID. Indicate the value of VGS. Indicate the value of VDS.arrow_forward[2] What is threshold voltage for MOSFET? Derive the equation of Vt of MOSFET. V = Veo + Y V(2. Pp + |Vsbl) – /2. Pb %D Tarrow_forward
- Qa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. )arrow_forwardFor the common base connection of an npn silicon transistor, supply at emitter is 10 V and emitter resistance is 2.5 kΩ. The supply at collector side is 25 V and collector resistance is 2 kΩ. Draw the DC load line and find out the operating points. Draw the circuit. ..arrow_forwardIdentify the source, drain, gate, and bulk terminalsand find the current I in the transistorsAssume VTN = 0.70 Varrow_forward
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How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License