The NMOS transistor in the source-follower circuit of Fig. 5 has gm-5mA/V and a large ro. Find the open-circuit voltage gain and the output resistance. 10 kn Fig. 5

b)The transistor consists of three terminals. The main reason for designing configurations is that it requires four terminals in order to provide the input and the output connections of the circuit for effective amplification. Now in your own words describe how Bipolar Transistors Transistor ( BJT ) various configurations are designed with relating diagrams. In your own estimation evalute which one is most widely used when looking at appreciable output for an amplifier?

Please, I want the solve to the two questions, with a drawing of the equivalent circuit in the case of dc and in the case of small signal.

1. Assume that the source voltage for the D-MOSFET in the following figure is measured and found to be 1.6 V. a. Compute lo and Vos- b. If gm = 2000 umho, what is the voltage gain? c. Compute the input resistance of the amplifier. d. Is the D-MOSFET operating in the depletion or the enhancement mode? 100 my pp 1.0 kHz HI C₁ 0.1 µF R₁ 5.1 ΜΩ R₂ 10 ΜΩ +VDD +24 V ① RD 2.7 C3 Rs 330 Ω OV ORI C₂ 33 μF

B= infinity, Assume BJTs are identical. Find R such that a DC current of 0.25mA for transistors Q1 and 2. Find Rc that results in 3V DC at he collectors of Q1 and 2. Find the differential voltage gain.

Answer the question correctly with neat handwriting and show some explaination.

I NEED THOSE 5, THE POSSIBLE ANSWERS ARE THOSE WITHIN THE DROPDOWN MENU

The MOSFET in the circuit below has V = 1 V and kn = 1 mA/V². Determine the values for the drain and source resistors, Rp and Rs., so that the drain current is 2 mA and Vout = 1 V. + 5 V RD Vout RS -5 V

clearly hand write， As soon as possible！

This is Electronic Devices about BJT. Find the Base Voltage Vb, Emitter Voltage Ve and Collector Voltage Vc using the Thevenin Theorem. draw the Thevenin equivalent circuit.