The following paragraph is a short article on p-n junction. Fill in the blanks with the most suitable answers. UTM UT UTM UTM a UTM UTM UTM UTM UTM 8 Ur

Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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Q.1 The following paragraph is a short article on p-n junction. Fill in the blanks with the
a UTM
a UTM UTM UTM
A p-n junction is formed when a p-type semiconductor is placed in contact
with an n-type semiconductor. A p-type semiconductor is a semiconductor doped with
S UTM S UTM UTM
AUTM S Uf
_(i) atoms in which
semiconductor on the other hand is a semiconductor doped with
UTM
_(ii) are the majority charge carriers. An n-type
which
a UTM
type semiconductors can act as a
_(ii) atoms
_(iv) are the majority charge carriers. Although the p-type and 'n-
individually. But when they are in contact together,
_(v) at room temperature, they are not used
UT semiconductor device known as
(vi).
UTM B UT
Transcribed Image Text:most suitable answers. Q.1 The following paragraph is a short article on p-n junction. Fill in the blanks with the a UTM a UTM UTM UTM A p-n junction is formed when a p-type semiconductor is placed in contact with an n-type semiconductor. A p-type semiconductor is a semiconductor doped with S UTM S UTM UTM AUTM S Uf _(i) atoms in which semiconductor on the other hand is a semiconductor doped with UTM _(ii) are the majority charge carriers. An n-type which a UTM type semiconductors can act as a _(ii) atoms _(iv) are the majority charge carriers. Although the p-type and 'n- individually. But when they are in contact together, _(v) at room temperature, they are not used UT semiconductor device known as (vi). UTM B UT
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