The device is required to have a built-in voltage, Vbi = 0.67 V. The device is to be fabricated by ion implanting phosphorus (P+) ions with an energy of 110 keV into the surface region of a single 300 mm diameter p-type silicon wafer with an acceptor concentration, NA = 8.20 x 10^15 cm–3. Calculate the phosphorus concentration required in order to produce a pn diode with the desired built-in voltage

The device is required to have a built-in voltage, Vbi = 0.67 V. The device is to be fabricated by ion implanting phosphorus (P+) ions with an energy of 110 keV into the surface region of a single 300 mm diameter p-type silicon wafer with an acceptor concentration, NA = 8.20 x 10^15 cm–3. Calculate the phosphorus concentration required in order to produce a pn diode with the desired built-in voltage

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

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