At what temperature will intrinsic silicon become a conductor? Assume that un = 350 cm²/Vs and up = 60 cm²/Vs. The properties of silicon are as follows: B = 1.08 x 1031 K-3 cm-6, k = 8.62 x 10-5 eV/K, and EG = 1.12 eV. Hint: o≥1000(92-cm) typing format please for a conductor

At what temperature will intrinsic silicon become a conductor? Assume that un = 350 cm²/Vs and up = 60 cm²/Vs. The properties of silicon are as follows: B = 1.08 x 1031 K-3 cm-6, k = 8.62 x 10-5 eV/K, and EG = 1.12 eV. Hint: o≥1000(92-cm) typing format please for a conductor

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

See similar textbooks

Related questions

Q: 7.32. Data has to be transmitted from a remote space probe via an RF link. The baseband data signal…

A: Modulation is a process in communications where a characteristic of a carrier signal is varied in…

Q: Draw an energy level diagram (E vs. R) featuring a ground electronic state and two excited…

A: The distribution of energy levels inside a system is shown graphically in an energy level diagram. A…

Q: An inductor of 0.3 H and resistance 60 ohms is connected between each line and the neutral of 50 Hz…

A: In this question, we need to determine the current in each line and total power by the system. We…

Q: Activity 1: You are examining a series RLC load driven by a 50-Hz, 230-Vac (RMS) source. R= 12 Q2, L…

A: The objective of the question is to analyze a series RLC circuit driven by a 50-Hz, 230-Vac (RMS)…

Q: An asymptotically stable linear system is given as follows: x (t) = ([ - 1, - 1], [1, - 2])x(t) +…

A: Given:State model of an asymptotically linear system, we need to determine the system transfer…

Q: = a) A two-port network has the following parameters: Z22 = 400, Z11 = 300, Y22 0.05 S. Calculate…

A: The given values,

Q: If the potential difference between two points is 700mV, how much energy is expended to move 80mC…

Q: The Energy of the signal 10 e-stu(t) in the frequency band [0] Hz is

A: To find the energy of the signal in the frequency band Hz, we can use Parseval's theorem, which…

Q: The given Boolean expression X = A.B.C.D+ A. BCD + ABCD + ABCD + ABCD + ABCD + ABCD + ABCD + ABCD +…

Q: Z-transfer function of a digital control system is given by z² - 3z- - 4 (z − K) (2z² – 2z+1) G(z):…

A: The Z-transform is a mathematical transform used in the analysis and representation of discrete-time…

Q: In a lossless medium (₁ = 9, f₁ = 1) the propagating plane wave has the strength of the magnetic…

Q: (a) Given the circuit in Fig. 14.67, determine the transfer function ( V.W (b) If R = 40 ks2 and C=…

A: The transfer function is defined as the ratio of the Laplace transform of the system's output to the…

Q: The current wave form is shown in the figure below. What is the average value over the time interval…

A: Given data:Required information:

Q: Consider the following circuit. t=0 vs (t) (+ +1 Find the time constant. T i(t) Assume that v, (t) =…

Q: 6. For the circuit depicted in Figure below (R1=R2=1KQ) plot Ix and IR1 as a function of Vx for two…

A: A circuit, To do:We have to plot Ix and IR1 as function of Vx with a) When VB= -1 V,b) When VB= +1…

Q: A transistor has 3 = 105 and Ic = 840 μA. What is the value of lg?

A: Given data:Required information:

Q: 5 a) Define transfer function. Discuss the significance of poles and zeros of a transfer function.…

A: A transfer function in control theory represents the relationship between the input and output of a…

Q: Find the complex impedance at 10 kHz of the following networks: (a) 1 kn in series with 10 nF (b) 10…

A: Part AIn this case, the values of the resistor, capacitor, and the frequency of the ac signal are…

Q: Given that (f(t)) F(S) - 142 Without taking the inverse Laplace transform, write the Laplace…

A: The Laplace transform is a mathematical technique used to analyze linear time-invariant (LTI)…

Q: oblem 1. Find Vx in the following problem, using power technique method V2 LIA V1 24V V3 1A + 24V 4A…

A: The rate at which work is done or energy is transferred or converted. It is a scalar quantity…

Q: need VIE 1.1= 1/₂ = Iz V3 13 V4 I 1 = Q Givens VT130 RI=45 R₂=12 R3=12 R4=14 No Answers in De Iy: IT…

A: Given Data:A DC resistive circuit of,To Find:The values of,Note:If the short-circuit line between…

Q: Consider a 3-bus system of the reactive network in Figure below where bus-bar 1 is slack. Use…

A: The objective of the question is to determine the voltage at bus 2 and bus 3 using the Gauss-Seidel…

Q: In the network shown in figure, the switch closes at t=0. The capacitor is initially uncharged find…

A: In the given questions we need to calculate the voltage and current through capacitor.

Q: A CMOS inverter is to be designed to have mid-point voltage V₁ equal to half of Vdd. Given the…

Q: Please solve it

A: The objective of the question is to determine the number of poles in the right half-plane and the…

Q: Example: Determine the Fourier transform for- <w<rt in the case of each of the following periodic…

A: Given Data:The discrete-time signals of,To Find:The Fourier Transform of the signals.

Q: What is a diode limiter circuit?

A: A diode limiter circuit, also known as a clipper, is a device used in electrical and electronic…

Q: 3.47 For the vector field E = f10e¯" - 23z, verify the divergence theorem for the cylindrical region…

A: Given thatthe cylindrical region enclosed by r = 2, z = 0, and z = 4.The divergence theorem is given…

Q: For the network shown below, the switch is closed on to position 1 when t=0 and then moved to…

A: An inductor is a passive two-terminal electronic component that stores energy in a magnetic field…

Q: 1. If R = 100 in this circuit, find the current, I, show all steps in the process R 492 R R 30V R R

Q: ↑f(t) ♫ a) List all symmetries applicable to the periodic function shown above. b) Find the Fourier…

A: The given periodic signal is shown below,we are required to find:a) symmetries applicable to the…

Q: Using a labelled diagram, describe cold-junction compensation for a thermocouple and explain why it…

A: It is asked to describe cold-junction compensation for a thermocouple and explain why it is…

Q: 4. For the following truth table write the sum-of-products Boolean equations for output Y, for…

Q: Data has to be transmitted from a remote space probe via an RF link. The baseband data signal has a…

A: We are given that data has to be transmitted from a remote space probe via an RF link. The baseband…

Q: Design a combinational logic circuit with four inputs A, B, C, D and one output F as follows. The…

A: A Karnaugh Map (K-map) is a graphical representation of truth tables used in digital logic design…

Q: Consider the convolution of two signals (1),h(1) y(t)=e¹u(t)* Σ 8(t−3k) k= = Σ e¹u(t)* 8(t−3k) Use…

A: We are provided the convolution of two signals i.e.We need to use the property of sampling of the…

Q: Solve this question 1)In concentrating solar power - central receiver, one of the following…

A: 1)In concentrating solar power - central receiver, one of the following advantages is wrong…

Q: b) Determine the transfer function, for the rotational mechanical system with T(S) gear as shown in…

A: In the given questions we need to calculate the transfer function of the given system.

Q: A microwave oven cooks food by irradiating the food with microwave power generated by a magnetron.…

A: tan δc=0.35Operating frequency = 2.45∗109 HzFind: -The average power per cubic meter.

Q: b) Applying superposition theorem, determine V, and I, for the following network. w 202 10 V lx +…

A: Given circuit,Asked to find the voltage Vx and current Ix in the above circuit.

Q: 3. Given the information appearing in Fig. 4.120, determine: a. lc. Voc b. Vcc c. B. d. Rg. Es la=…

A: For transistor emitter current Ie = collector current Ic + base current Ib.Use above equation to…

Q: H.W.(4): Calculate the voltage that must be applied across the soldering iron in Figure shown below…

A: in the given questions we need to calculate the supply voltage to the soldering iron.

Q: 2. Find i.(t) for t > 0 in the following circuit. 24 V 6ΚΩ i (t) 312 ΚΩ Η 50 μF 200 μF Η 150 με 4 ΚΩ…

A: Given Data:An RC transient circuit with,Capacitors,To Find:The expression for the current

Q: Express the following functions mathematically and find their Laplace transforms. f(t) -1 1 g(t) 1…

A: For the given waveforms it is asked to express them mathematically and also it is asked to find…

Q: expected range of diode voltage?

Q: Using a constant voltage drop of 0.7V across the diode in forward bias, find the current I and the…

A: In this question, we need to determine the current I and voltage V in the circuit. Assume voltage…

Q: 1. a) A magnetic circuit is formed using an iron core with relative permeability 1000 and single air…

A: AC=1.6∗10−3m2lC=0.8 mair gap length g=2∗10−3 mμr=1000N=100

Q: i) Sketch a diagram that describes the implementa. integral action.

A: In the ever-evolving landscape of control engineering, achieving optimal performance and robust…

Q: An amplifier has a bandwidth of 4 MHz with 10 ko as the input resistor. What is the rms noise…

A: Given data:Required information:

Q: Three 2.2-kVA, 440/220-V transformers are connected to form a three phase transformer.  Each…

Concept explainers

Capacitor

The capacitor is an element used to store electrical energy in the electrical field. A capacitor is a form of passive energy.

Question

At what temperature will intrinsic silicon become a conductor? Assume that un = 350
cm²/Vs and up = 60 cm²/Vs.
The properties of silicon are as follows: B = 1.08 x 1031 K-3 cm-6, k = 8.62 x 10-5 eV/K,
and EG = 1.12 eV.
Hint: o≥1000(2-cm)-1 for a conductor
typing format please

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1: finding ni value

VIEW

Step 2: Finding Temperature

VIEW

Solution

VIEW

Step by step

Solved in 3 steps with 2 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

High density 6w density to low density low bavyier VoltaJe Higharier, Voltad to high low doPed density atoms Diffusion Curment from Conductivity of Semi conductor In crease with FoYward biased P-N junction
A simple p*n junction is designed to work as IMPATT diode. The doping concentrations in the p* layer is 1019 cm-3 while the doping in the n-layer is 0.7 x1016 Calculate the peak electric field if the breakdown voltage is 80 V and the dielectric constant is 11.9. Express your answer in the unit of kV/cm. cm-3
Consider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3
A gallium arsenide semiconductor at T = 300 K is homogeneously doped with Nd= 5 X 1016 cm-3 and N₂ = 0. Calculate the a drift current for an applied E field of 20 V/cm Jdrf = 1360 A/cm² Jdrf = 2432 A/cm² drf = 624 A/cm² Jdrf=512 A/cm²
a. If you do not go completely around the loop when applying Kirchhoff’s voltage law, then the algebraic sum of the voltages cannot be determined the algebraic sum of the voltages will always be positive the algebraic sum of the voltages will always be negative the algebraic sum is the voltage between the start and finish points b. A p -type semiconductor is a semiconductor doped with impurity atoms whose electron valence is +4 pentavalent impurity atoms trivalent impurity atoms
An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 1 X 1017 cm-3 cm³ and Na and N₂ = 5 X 1016 cm¯³ at T = 300K. Determine the peak electric field for this junction for a reverse voltage of 2 V. Emax = 3.88 X 105 V/cm Emax = 1.35 X 105 V/cm Emax 1.70 X 105 V/cm O Emax = 3.21 X 105 V/cm =
The circle is below(for D1-1N4148 is 1N4148 Diode). and also there have a table(. Note that the first 3 rows of measurement are obtained when the diode is reverse-biased) Vout_dc (V) VD (V) ID (μA) 0.51 -0.51 0.0 0.23 -0.20 0.0 0.10 -0.08 0.0 0.00 0.00 0.0 0.05 0.04 0.0 0.11 0.09 0.0 0.17 0.15 0.1 0.19 0.20 0.1 0.27 0.25 0.4 0.32 0.30 1.6 0.36 0.34 3.1 0.42 0.40 8.2 0.46 0.42 14.3 0.52 0.47 28.0 Questions: 1) plot the diode’s I-V characteristics on a linear scale (ID on the y-axis and VD on the x-axis) 2) [RP4] 3) [RP5]
Find the barrier voltage in a pn junction at T=300k assuming VT= 25.9 mV, NA=1018/cm3, ND=1017/cm3 0.0764 V 0.874 V 1.754 V
PROBLEM: The diode (blue line) should be at -10V not -8V SOFTWARE USED: LTspice XVII---Figure 1 is my work, and figure 2 is the correct sample. Please tell me what I did wrong. Thank you :))---Below is the .asc filehttps://www.mediafire.com/file/zxauoh86zi79nfu/EXPERIMENT_01.asc/file
the non-inductive resistance of kelvin double bridge are set at 100ON each, the standard resistance is set at 0.10020 and the low resistance 0.0000122 was very low. determine the unknown resistance
Diodes Are Connected In Series To Share A Total... 21 Question • Two diodes are connected in series to share a total reverse voltage of VD=D 5 KV. Reverse leakage currents of the diodes are ID1=30 mA and Ip2=35 mA. - Find Vp1 and Vp2 for R,=R2=100 k2 - Find R, and R2 for VD1=VD2 R1 VD1 Hint: Is=L,+IRj= I,2+IR2 VD R2 VD2
8. Liquids with solid impurities a) Have higher dielectrie strength b) Of large size have higher dielectric strength c) Have lower dielectric strength as compared to pure liquids d) None of the above 9. Peak to peak ripple is defined as a) the difference between average de voltage and peak value b) the difference between maximum and minimum de voltage c) the difference between maximum ac and average dc voltages d) the difference between ac (rms) and average de voltages 10. In a Cockroft-Walton circuit, input voltage 100 kV load current 25 mA, supply frequency 100 Hz, each capacitor 10 nF. The optimum no. of stages for maximum output voltage is a) 1 b) 2 c) 10 d) 35