Suppose we need an NMOS transistor for which iD=2 mA when vGS=vDS=5 V. Process constraints result in KP=50 μA/V2 and Vto=1 V. Determine the width-to-length ratio needed for the transistor. If L=2 μm what is the value of W?

3.1 A transistor is biased at I, = 0.5 mA and has B. = 150. %3D a) Determine gm and r„ at room temperature. b) The input resistance hie = 7.6 kQ . Find rp. c) A load resistance R. = 2 kQ js used and the transistor is driven from a 300- source. Estimate the voltage gain. %3D

Consider an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that = 4, unCox 70 x 10-6 AV-2, the threshold voltage is 0.3 V, and the channel length modulation parameter is 0.09 V¹. In the saturation region, the drain conductance (in micro seimens) is - W L

Instruction/s:  Draw, Illustrate and label your schematic diagram before solving the problem. 1.) Given a Fixed-Biased transistor circuit with Beta DC is 200 , voltage at common collector is +22v ,base supply voltage is +11V, Base resistor is 47kOhms , collector resistor is 390 ohms ,Voltage at Base-emitter junction  is 0.7v. Determine the Q-point of collector current and Voltage at collector-emitter junction.  These is the example or guide that might help in answering the problem.