A MOS-C, p-type semiconductor is Si at 300K, Xo = 0.5 µm and doped with 6 x 15 10/cm and operates under depletion bias. Assume that K, = 11.8 for Si and Ko = 3.9 for Sio?. Calculate the following parameters: (a) Calculate the depletion width (W) (b) Voltage gate (VG).

1.) Which type of semiconductor material has been doped such that the majority of its current carriers are holes? a. None of these b. P-Type Semiconductors c. Q-Type Semiconductors d. N-Type Semiconductors   2.) The outer shell of an atom can hold up to a maximum of x electrons? What is x? a. 5 b. 2 c. 4 d. 8   3.) Which device has one PN junction: a. None of these b. Resistors c. Transistors d. Diodes

What is a highly doped n semiconductor? What is a doped p semiconductor?

A. Define the drift current in a semiconductor and give the mathematical expressions about both the current density of the electron drift current and the current density of the hole drift current. Define the diffusion current in a semiconductor and give the mathematical expressions about both the current density of the hole diffusion current and the current density of the electron diffusion current.