silicon is a doped with acceptor atoms to a density of 10^22 m^-3. If it is assumed that all acceptor centers are ionized . Calculate the conductivity of the extrinsic silicon, given that the intrinsic density is The density of acceptor atom is na=1022 m−3na=1022 m-3. The intrinsic density is ni=1.4×1016 m−3ni=1.4×1016 m-3. The mobility of electron is μe=0.16 m−3μe=0.16 m-3. The mobility of holes is μh=0.045 m−3μh=0.045 m-3.

silicon is a doped with acceptor atoms to a density of 10^22 m^-3. If it is assumed that all acceptor centers are ionized . Calculate the conductivity of the extrinsic silicon, given that the intrinsic density is The density of acceptor atom is na=1022 m−3na=1022 m-3. The intrinsic density is ni=1.4×1016 m−3ni=1.4×1016 m-3. The mobility of electron is μe=0.16 m−3μe=0.16 m-3. The mobility of holes is μh=0.045 m−3μh=0.045 m-3.

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter19: Capacitors

Section: Chapter Questions

Problem 3RQ: A capacitor uses air as a dielectric and has a capacitance of 3 F. A dielectric material is inserted...

See similar textbooks

Similar questions

A capacitor uses air as a dielectric and has a capacitance of 3 F. A dielectric material is inserted between the plates without changing the spacing, and the capacitance becomes 15 F. What is the dielectric constant of this material?
High density 6w density to low density low bavyier VoltaJe Higharier, Voltad to high low doPed density atoms Diffusion Curment from Conductivity of Semi conductor In crease with FoYward biased P-N junction
Chromium has a BCC crystal structure and an atomic radius, R = 0.2149 nm. Determine the linear density and planar density of the [110]. Note: End of the question 110 not the grade. Kindly give me right solution with clear calculations.
Electrons from valence band rises to conduction band when the temperature is greater than 0 degree Kelvin. Select one: True False
Q1: In common coordinate systems draw the V-A characteristics of Si diode and Ge diode for T=25C.
for a silicon diode with I s= 2.5 µ A at 300 °K, find the forward voltage at a forward current
At what temperature will intrinsic silicon become an insulator, based on the deﬁnitions in Table ? Assume that μn = 1800 cm2/V·s and μp = 700 cm2/V·s.
A silicon diode at room temperature has a cross sectional area of 10µm². It is doped such that: Na = 4 x10¹4 cm³³ and Nd = 10¹5 cm³³ and biased such that VD = .2V. Determine the current through the diode. Show your work! Parameters to use K = 1.38 × 10−23 J/K q= 1.6 × 10-19 coulombs For Silicon at room temperature(T = 300°K): EG = 1.12eV ni = 1 × 10¹0cm-3 €Si = K sit0 = (11.8) (8.85 × 10-14)F/cm Dp = 10cm²/sec fn = 1230.77cm²/V - sec, Dn = 32cm²/sec Tn = 2.0 × 10−4sec, Tp=9.0 × 10-5 sec En = 8.0 × 10−²cm, Łp = 3.0 × 10-²cm Hp = 384.62cm²/V – sec, -
Electrical Engineering please solve this thank you The following values are given for a shocdley diode Vi (derel vollaye) • 0.025 V Is (Deverse salunalia cmal): 10X10A -15 Given voltaye eg ^: v(t) = 0.7+ 8 Vr cosut IA RL= 50 0 %3D Find avg. powen diipted in shochly diode € ay.power deliveud to load
8. Liquids with solid impurities a) Have higher dielectrie strength b) Of large size have higher dielectric strength c) Have lower dielectric strength as compared to pure liquids d) None of the above 9. Peak to peak ripple is defined as a) the difference between average de voltage and peak value b) the difference between maximum and minimum de voltage c) the difference between maximum ac and average dc voltages d) the difference between ac (rms) and average de voltages 10. In a Cockroft-Walton circuit, input voltage 100 kV load current 25 mA, supply frequency 100 Hz, each capacitor 10 nF. The optimum no. of stages for maximum output voltage is a) 1 b) 2 c) 10 d) 35
Find the barrier voltage in a pn junction at T=300k assuming VT= 25.9 mV, NA=1018/cm3, ND=1017/cm3 0.0764 V 0.874 V 1.754 V
2.41 A parallel plate capacitor is made of two circular plates separated by a distance of 5 mm and with a dielectric with dielectric constant of 2.2 between them. When the electric field in the dielectric is 3 x 104 V/m, the charge density of the positive plate will be, nearly : electrons in th 2. A small con dielectric. 3. Eddy curren Which of the ab (a) 1, 2 and 3 (c) 1 and 3 on