A piece of crystalline silicon (Si) is doped uniformly with 4×1016 phosphorus atoms/cm3. For Si, B (material dependent parameter) = 7.3×1015 ??−3?−3/2, ?? (energy bandgap) = 1.12 ??, k (Boltzmann constant) = 8.62×10−5 ??/? or ?=1.38×10−23 ?/?, 1??=1.6×10−19 ?.a-) What type of material is this?b-) What are the hole and electron concentrations at room temperature (?=300 ?)?c-) What are the hole and electron concentrations at 400 ? ? A piece of crystalline silicon (Si) is doped uniformly with 4 x 1016 phosphorusatoms/cm?. For Si, B (material dependent parameter) = 7.3 x 10+5 cm-³K-3/2, E, (energybandgap) = 1.12 eV, k (Boltzmann constant) = 8.62 x 10-5 eV/K or k = 1.38 x 10-2ª J/K,leV = 1.6 x 10-19 J.a-) What type of material is this?b-) What are the hole and electron concentrations at room temperature (T = 300 K)?c-) What are the hole and electron concentrations at 400 K ?

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Answered: A piece of crystalline silicon (Si) is…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

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A piece of crystalline silicon (Si) is doped uniformly with 4×1016 phosphorus atoms/cm3. For Si, B (material dependent parameter) = 7.3×1015 ??−3?−3/2, ?? (energy bandgap) = 1.12 ??, k (Boltzmann constant) = 8.62×10−5 ??/? or ?=1.38×10−23 ?/?, 1??=1.6×10−19 ?.
a-) What type of material is this?
b-) What are the hole and electron concentrations at room temperature (?=300 ?)?
c-) What are the hole and electron concentrations at 400 ? ?

A piece of crystalline silicon (Si) is doped uniformly with 4 x 1016 phosphorus
atoms/cm?. For Si, B (material dependent parameter) = 7.3 x 10+5 cm-³K-3/2, E, (energy
bandgap) = 1.12 eV, k (Boltzmann constant) = 8.62 x 10-5 eV/K or k = 1.38 x 10-2ª J/K,
leV = 1.6 x 10-19 J.
a-) What type of material is this?
b-) What are the hole and electron concentrations at room temperature (T = 300 K)?
c-) What are the hole and electron concentrations at 400 K ?

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