A piece of crystalline silicon (Si) is doped uniformly with 4×1016 phosphorus atoms/cm3. For Si, B (material dependent parameter) = 7.3×1015 ??−3?−3/2, ?? (energy bandgap) = 1.12 ??, k (Boltzmann constant) = 8.62×10−5 ??/? or ?=1.38×10−23 ?/?, 1??=1.6×10−19 ?.a-) What type of material is this?b-) What are the hole and electron concentrations at room temperature (?=300 ?)?c-) What are the hole and electron concentrations at 400 ? ? A piece of crystalline silicon (Si) is doped uniformly with 4 x 1016 phosphorusatoms/cm?. For Si, B (material dependent parameter) = 7.3 x 10+5 cm-³K-3/2, E, (energybandgap) = 1.12 eV, k (Boltzmann constant) = 8.62 x 10-5 eV/K or k = 1.38 x 10-2ª J/K,leV = 1.6 x 10-19 J.a-) What type of material is this?b-) What are the hole and electron concentrations at room temperature (T = 300 K)?c-) What are the hole and electron concentrations at 400 K ?

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A piece of crystalline silicon (Si) is doped uniformly with 4 × 101“ phosphorus atoms/cm³. For Si, B (material dependent parameter) = 7.3 × 1045 cm-³K-3/2, E, (energy bandgap) = 1.12 eV, k (Boltzmann constant) = 8.62 × 10-3 eV/K or k = 1.38 × 10-23 J/K, 1eV = 1.6 × 10-1º J. a-) What type of material is this? b-) What are the hole and electron concentrations at room temperature (T = 300 K)? c-) What are the hole and electron concentrations at 400 K ?

A piece of crystalline silicon (Si) is doped uniformly with 4 × 101“ phosphorus atoms/cm³. For Si, B (material dependent parameter) = 7.3 × 1045 cm-³K-3/2, E, (energy bandgap) = 1.12 eV, k (Boltzmann constant) = 8.62 × 10-3 eV/K or k = 1.38 × 10-23 J/K, 1eV = 1.6 × 10-1º J. a-) What type of material is this? b-) What are the hole and electron concentrations at room temperature (T = 300 K)? c-) What are the hole and electron concentrations at 400 K ?

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

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