R2 Rs R1 A A Vs RL 100 ka 2 ka 200 ka 30 0
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The Figure below represents the connection between a sensor circuit and a generic load. The information is carried by the voltage signal. An amplification stage is included. The required voltage gain is -100. Using a selection of the draggable items provided, match the resistor value for Rs, R1 and R2 in Figure for which the schematic represents the required electronic design.
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- For Fixed Bias Configuration Solve for Ib, Ic and le. Atleast 2 decimal place. Be mindful of units. Assume Ic is not equal to le. ... 4 RC 15002 RB VCC 20V 90A/A 100k2 Ib=Blank 1 HA Ic=Blank 2mA le=Blank 3 mA Blank 1 Add your answer Blank 2 Add your answer Blank 3 Add your answerThe power output of the half-wave rectifier is rated at 102.4 W with a load resistor of 40 ohms. The RMS voltage at the output is: O A. None of the other choices are correct O B. 12.5 V O C. 102 V O D. 25.5 V O E. 51 Vas ap q1a
- The input to a full-wave rectifier is 30 V AC (RMS). The load resistor is 10 ohms. The DC power at the output is: O A. 73 W O B. 18 W C. None of the other choices are correct D. 36 W O E. 146 WFAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…Damping ratio quettion.
- A three-phase rectifier is supplied by a 173.2-V rms line-to-line 60-Hz source. The RL load is a 100 resistor in series with a 15-mH inductor. Determine THD taking Is1 = 1.35in the circuit shown below. Determine the following A)Vs (at the secondary) B)Vout(across R) C)Vrip (ripple Voltag) D) VDC full wave rectifier E) PIV(peak inverse Voltage) V1 C1 100µF 240V / 50HZ R1 104µF 1k T1 30:1Question 15 In half wave rectifier with filter, if the capacitance is increased, the ripple factor increases. True False Moving to another question will save this response. ip
- B01.2 QUESTIONS ON THIS CHAPTER C a رها The conductivity of a pure semiconductor is due to: al electrons. 2 □ 3 04 □5 al 02 3 04 5 A pure semiconductor is a good conductor when the temperature is: □ 2 □3 4 5 AP type semiconductor is obtained by adding impurities such as: al LESSON BOI: INTRODUCTION TO SEMICONDUCTORS 2 holes positive ions of the N regions and electrons electrons and holes positive ions of the P regions and holes □ 3 04 5 very high very low ol □ 2 □ 3 4 □5 absolute zero when ranging between 0 and 25 °K it is not affected by temperature An N type semiconductor is obtained by adding impurities such as: those belonging to group III of the periodic table of the elements al phosphorus only those belonging to group V of the periodic table of the elements those belonging to the group III of the periodic table of the elements antimony only gallium only boron in the proportion of 25 %, and arsenic as 75 % boron only aluminum and antimony together at 50% those belonging to group V…In the circuit of figure Nº A, the secondary voltage Vs is 15 volts rms with a frequency of 60 Hz, R equal to 100 Ohms and C equal to 1000 microfarads. The diodes are silicon (Vd = 0.7 volts) and the Zener diode is 15 volts. Determine:a) The magnitude of the ripple voltage at Cb) The Magnitude of the Peak Inverse Voltage (PIV) for D1 and D2Electrical Machines Q6