Parameter Minimum | Typical Maximum Units de supply voltages Vs Input offset voltage Vos Thermal drift D, Input biasing current /g Input offset current los Differential input resistance R Common-mode input resistance Re Output resistance R, Input capacitance C Open-loop voltage gain A, Common-mode rejection ratio CMRR Unity-gain bandwidth f, +22 V 1.0 5.0 mV 15 µV/°C 80 550 nA 20 200 nA 0.3 2 75 Ω 4.0 pF V/mV 50 200 70 90 dB 1.0 MHz v/µs dB Slew rate SR 0.5 Power supply rejection ratio PSRR 70 90 Parameters of a practical op-amp (i) Determine the full-power bandwidth for a 12-V output.

Parameter Minimum | Typical Maximum Units de supply voltages Vs Input offset voltage Vos Thermal drift D, Input biasing current /g Input offset current los Differential input resistance R Common-mode input resistance Re Output resistance R, Input capacitance C Open-loop voltage gain A, Common-mode rejection ratio CMRR Unity-gain bandwidth f, +22 V 1.0 5.0 mV 15 µV/°C 80 550 nA 20 200 nA 0.3 2 75 Ω 4.0 pF V/mV 50 200 70 90 dB 1.0 MHz v/µs dB Slew rate SR 0.5 Power supply rejection ratio PSRR 70 90 Parameters of a practical op-amp (i) Determine the full-power bandwidth for a 12-V output.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Adiff-amp is biased with a constant-current source lo- 0.25mA that has an output resistance of R. - 8MO. The bipolar transistor parameters are B=100, VT = 0.025 V and VA -. Determine the common-mode input resistance. O a. Ricm = 538 MA O b.Ricm- 308 MO OC Ricm = 808 MO Od Ricm = 704 MQ
Answer the following with illustration and solutions. 2.) If C1 = C2 = 100pF, determine the output frequencies produced by this arrangement:a. (a) when R1 = R2 = 12kilo-ohms andb. (b) when R1 = R2 = 8kilo-ohms See the example below..
What is an A/D converter with Voltage-to-Frequency Conversion (VFC)? What is the working principle?
Q2// Answer the following questions about voltage-feedback bias circuit for the figure below. 1-Determine Ver and VCB. 2- What happens to the voltage Ve if the resistor Rp is open? 22 K 3- What might cause VCE to become nearly 9 V? 4- Determine the change in Ie from 25° to 75° C, if Ico 0.2 HA, and VBE = 0.7V. 10 ul B-80
c) As given in the figure a clamper circuit with the input signal Vi is proposed to design. Determine the output voltage with the exact solution step by step. Sketch transfer characteristic VO versus Vi.
Sketch the waveforms of the inductor current, the current through the filter capacitor branch, and current through the load resistance. Describe the nature of the current through the equivalent series resistance (ESR) of the capacitor. What is the effect on the shape of the current when the value of the ESR is increased? Explain how the switching frequency component is eliminated by the output filter network. The efficiency of the buck converter decreases with an increase in the load current. Justify What is the effect of increasing switching frequency on the current ripple of the converter?
In the Collector-base resistance circuit find, feedback gain, input and out impedance and feedback factor Assume Rs= 600ohm ,Rb=40K ,Rc=2K Vcc=10V ,hfe=80 ,hie=5K , hoe=hre is equal to zero
Calculate the closed loop gain for the following circuit. Assume A = 0 for both transistors and R1+ R2 is very large. Circuit parameters / Devre Parametreleri 9m1 = 49 ms, 9m2 = 33 ms, R, = 101 kn, R2 = 26 k, Rp = 2.2 kn VDD Rp Vout ER Vino ER2 O a. 10.28 O b. 4.67 O c. 8.41 O d. 7.48 O e. 6.54 O f. 3.74 O g. 5.61 O h. 2.80 W WH. w-
The saturation current for the de bias circuit with voltage feedback is given by the following: 4. Vcc Ic = Icas Rc + RE max true O False
1) For a series regulator show that the output voltage can be made to be dependent only on a reference voltage and the feedback ratio. 2) list the 5 planar processes for Ic fabrication and explain them. 3) A circuit is built around a bi-polar NPN transistor. The base network has a diode and a capacitor in series while the collector is connected to the power supply through a resistor. if the resistor is connected to ground; i) draw the circuit ii) provide all the masking layout of the circuit 4) Explain the significance of the buried layer in npn transistor fabrication. 5) Draw the lateral view of the layout of a lateral pnp transistor. Label all the diffusion regions. 6) state five differences between series regulators and switching regulators.
Si transistor has ICEO = 0, B = 100, Rc=2kQ, Vcc=12 V. Assume that; (VCEQ = Vcc /2). The circuit of Figure below uses current- (or shunt-) feedback bias. The +Vcc find RC Cc 1. The value of IgQ RF 2. The value of RF lic Rs VL RL Cc R. R;
Question_1: Determine the value of small-signal parameter gm of Q, for the circuit shown below. Question_2: Determine the value of small-signal parameter r of Q, for the circuit shown below. a parametres degen Question_3: Determine the value of small-signal parameter r, of Q, for the circuit shown below. Circuit Parameters /E atrele Iş = 6x1016 A. B = 89, VA=8 V Rc Vcc 10 μΑΦ)