P2) Draw the schematic of the CMOS logic gate that implements the functionY = A + BC.(a) Identify the input conditions for the worst case rise/fall times and the best caserise/fall times.(b) Size your transistors, such that for the worst case the gate achieves the same riseand fall times of the unit-sized inverter of P1 when your gate is driving a loadcapacitance of 1.5pF.(c) Using the equivalent resistance to model the transistors and neglecting the diffusioncapacitances, estimate the worst case rise and fall time of your gate and compare themto that of the unit-sized inverter in P1.(d) Using the equivalent resistance to model the transistors and neglecting the diffusioncapacitances, estimate the best case rise and fall time of your gate.

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Answered: P2) Draw the schematic of the CMOS…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

Assume Vth = 1V and k = 50mA/V2. Given the schematic below, do the following: 1) Indicate and verify the state of each MOSFET and ?0 for the following input combinations. Fill-out the table below for each assumed state of the MOSFET for every input combination. Use ?ds,on approximation for linear operation. 2) Determine what kind of logic circuit is implemented in the circuit.
Draw the schematic circuit for a resistively loaded NMOS inverter and the relative voltage transfer characteristic. Indicate on the graph the three different regions of operation of the transistor. What happens to the static power dissipation generated in a loaded NMOS inverter when the input voltage, Vin, is equal to output low logic state Vin = VOL = VDD, at increasing values of the load resistor Rp? %3D Draw the schematic of a CMOS inverter with a load capacitance of 25 pF attached to the output. Calculate the total average power dissipation, if there is a square wave input signal switching at 40 MHz with an amplitude of VDD = 5 V and a quiescent leakage current IDDO = 200 nA. For the calculation consider VOH = VDD and VOL = 0.
You are asked to design an NMOS inverter with a resistive load, as shown in Figure 2.e, with the input voltage of either 0 V (logic level 0) or 3.3 V (logie level 1). The transistor is an n-channel enhancement type MOSFET with a threshold voltage of Vr = 1.5 V, an aspect ratio (WIL) of 20, and a gate capacitor per unit arca of 400 nF/em. The electron mobility is 500 cm/Vs. When the input is at logic level 1 (v, = 3.3 V), the transistor is in the linear region. Find the values of Voo and Rp to have the output voltage of 0.3 V at logic level 0 and 3.3 V at logic level +Vpo Rp O Va 1. Figure 2.e.
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The duty cycles for 3rd harmonic injection PWM is given by: ki sin(wt)+k2 sin(3wt) da 2 ki sin (wt-)+ką sin(3wt) de ki sin(wt- )+k2 sin(3wt) + 3 do 2 Derive the numeric value of coefficient k1 and k2 to get maximum voltage at the inverter
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