Now, Benjamin sets the inductor at the drain of MOSFET M2 with an inductance LD = 10 nH. Estimate the capacitance C₁ for the proper operation of the LNA with maximum gain at 1.575 GHz.

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(b). Now, Benjamin sets the inductor at the drain of MOSFET M₂ with an inductance LD = 10 nH.
Estimate the capacitance C, for the proper operation of the LNA with maximum gain at 1.575
GHz.
Transcribed Image Text:(b). Now, Benjamin sets the inductor at the drain of MOSFET M₂ with an inductance LD = 10 nH. Estimate the capacitance C, for the proper operation of the LNA with maximum gain at 1.575 GHz.
A student of the EEE307 class, Benjamin, designs a low noise amplifier (LNA) as shown in the
figure below (Fig. 2.1) for a power gain of 17 dB and a noise figure (NF) of 2 dB at its operation
frequency.
VDD
LG
Vin of m
LD C₁R₁
TM ₂
X
M₁
841
-O Vout
Fig. 2.1 LNA schematic (image adapted from B. Razavi ©2012)
Transcribed Image Text:A student of the EEE307 class, Benjamin, designs a low noise amplifier (LNA) as shown in the figure below (Fig. 2.1) for a power gain of 17 dB and a noise figure (NF) of 2 dB at its operation frequency. VDD LG Vin of m LD C₁R₁ TM ₂ X M₁ 841 -O Vout Fig. 2.1 LNA schematic (image adapted from B. Razavi ©2012)
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