VDD ERD HM₁ CDB CGS = Zin or this common-source stage, the parasitic capacitances in M₁ are: CGS=0.8pF, CGD=0.2pF, CDB=0.01pF. et gm of M₁=1mA/V, RD=5kohm, ignore channel lenght modulation effect. The absolute vaule of Zin at 10Mrad/sec = Mrad/sec. CGD kohm; while the pole of the output terminal (at drain of M1)=

Use the image below to help answers parts a and b.in an LRC type circuit series the inductive reactance is XL=484 ohms. and I=0.8 amps is the measured current amplitude.A) In the inductor determine the amplitude of the voltage.B)If the LRC circuit is at resonance frequency find the capacitive reactance.

The parameters of the circuit shown in Figure 1 are: B = 100, VBE = 0.7 V, VT = 26 mV, Cbc =12 pF, Cce= 15 pF and Cbe = 44 pF. Based on the circuit: i) Determine the midband voltage gain, A, = Vo. vi ii) Calculate the low cut-off frequencies caused by C1 and C2. iii) Calculate CE if the cut-off caused by this capacitor is 88 Hz. iv) Based on values in (ii) and (iii), what is the dominant low cut-off frequency? v) Determine the high cut-off frequency. +18V 3.3k2 C2=0.022µF C,=0.1µF V, 20k2 15k2 Vo 1k2 CE 6802 2.73V Vs

For given BJT, B=200. The applied input frequency is 20 Mhz and net internal capacitance is 100 pF. What is the CE short circuit current gain at ẞ cut-off frequency?