VDD ERD HM₁ CDB CGS = Zin or this common-source stage, the parasitic capacitances in M₁ are: CGS=0.8pF, CGD=0.2pF, CDB=0.01pF. et gm of M₁=1mA/V, RD=5kohm, ignore channel lenght modulation effect. The absolute vaule of Zin at 10Mrad/sec = Mrad/sec. CGD kohm; while the pole of the output terminal (at drain of M1)=

VDD ERD HM₁ CDB CGS = Zin or this common-source stage, the parasitic capacitances in M₁ are: CGS=0.8pF, CGD=0.2pF, CDB=0.01pF. et gm of M₁=1mA/V, RD=5kohm, ignore channel lenght modulation effect. The absolute vaule of Zin at 10Mrad/sec = Mrad/sec. CGD kohm; while the pole of the output terminal (at drain of M1)=

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question

CGD
CGS
VDD
ERD
M₁
M
: Сов
Zin
For this common-source stage, the parasitic capacitances in M₁ are: CGs=0.8pF, CGD=0.2pF, CDB=0.01pF.
Let gm of M₁=1mA/V, RD=5kohm, ignore channel lenght modulation effect.
The absolute vaule of Zin at 10Mrad/sec =
Mrad/sec.
HI
HH"
HH"
kohm; while the pole of the output terminal (at drain of M1)=

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