Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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Consider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor
(BJT) with a forward current gain BF, and two resistances Rc and Rp. The supply voltage is denoted as Vc.
The voltages Vin and Vout designate the input and output voltages, respectively, whereas the currents IB, Ic and IE denote
the base, collector, and emitter currents, respectively.
VcC
RC
IB
V out
V in
RE
GND
Throughout this question, we will also be using the following notations:
VBE designates the voltage between base and emitter.
VRE on denotes the threshold voltage of the base-emitter junction. For a silicon BJT, we have VBE.on0.7 volt.
VCe designate the voltage between collector and emitter.
Assume now that the BJT is in the saturation mode.
What is the expression of the output voltage Vout?
O Vout = Vin - VCE,sat
O Vout = VBE,on + VCE,sat
O Vout
Vin - VBE,on + VCE,sat
%3D
o Vout
Vin + VBE,on + VCE,sat
o Vout = 0
o Vout = VBE,on
O Vout = VBE,on - VCE,pat
%3D
O Vout
= VCE,sat
f)
What is the condition that Vin must satisfy for the BJT to be in the saturation mode?
RE
Rc
Re
O Vin > VBE,on +
- (Vcc - VCE,sat)
O Vin < VBE,0on
· (Vcc - VCE,sat)
Rg
Re
O Vin > VBE,on +
(Vcc- VCE, sat)
RE
O Vin < VBE,on
Rc
- (Vcc - VCE, sat)
RE
RE
Rc
o Vin > VBE,on +(R+Re) (Vcc
:- VCE, sat)
o Vin > VBE,on + (ReR) (Vcc - VcE,sat)
Rg+Rc
Rc
O Vin < VBE.om +(RR) (Vcc
- VCE sat)
O Vin < VBE,om+
Rg+Re) (Vcc – VCE, sat)
Rg+Rc
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Transcribed Image Text:Consider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor (BJT) with a forward current gain BF, and two resistances Rc and Rp. The supply voltage is denoted as Vc. The voltages Vin and Vout designate the input and output voltages, respectively, whereas the currents IB, Ic and IE denote the base, collector, and emitter currents, respectively. VcC RC IB V out V in RE GND Throughout this question, we will also be using the following notations: VBE designates the voltage between base and emitter. VRE on denotes the threshold voltage of the base-emitter junction. For a silicon BJT, we have VBE.on0.7 volt. VCe designate the voltage between collector and emitter. Assume now that the BJT is in the saturation mode. What is the expression of the output voltage Vout? O Vout = Vin - VCE,sat O Vout = VBE,on + VCE,sat O Vout Vin - VBE,on + VCE,sat %3D o Vout Vin + VBE,on + VCE,sat o Vout = 0 o Vout = VBE,on O Vout = VBE,on - VCE,pat %3D O Vout = VCE,sat f) What is the condition that Vin must satisfy for the BJT to be in the saturation mode? RE Rc Re O Vin > VBE,on + - (Vcc - VCE,sat) O Vin < VBE,0on · (Vcc - VCE,sat) Rg Re O Vin > VBE,on + (Vcc- VCE, sat) RE O Vin < VBE,on Rc - (Vcc - VCE, sat) RE RE Rc o Vin > VBE,on +(R+Re) (Vcc :- VCE, sat) o Vin > VBE,on + (ReR) (Vcc - VcE,sat) Rg+Rc Rc O Vin < VBE.om +(RR) (Vcc - VCE sat) O Vin < VBE,om+ Rg+Re) (Vcc – VCE, sat) Rg+Rc
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