Design an active LOW SR flip-flop using NOR gates only. And find its truth table. You can benefit from the table below : w Ce NAND pate med m merter :DD D Twe NAND gtes uned as an AND pa 6, G, The NAND gs ed OR g G, :D (d) Feur NAND es ed na NOR
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- An equation in reduced SOP form, is F=AB+B'C+A'C'. I need to draw a logic circuit F using NOT/AND/OR and logoc circuit F using all NAND gates. Thank you for the help. I understood the previous types of gates but I am confused on how to draw these circuits.Explain and design a mcd-6 co:unter using J-K flip flop. [A logic gate has two inputs A and B. Its output is equal to a 1 if and only if the two inputs A and B are equal. What logic functionality is this gate displaying? Exclusive NOR Exclusive OR AND NAND OR NOR
- DISCUSSION: 1- Design the logic eircuit for the following conditions and draw the output wave form, X is a 0 if any two of the three variables A, B, and C are 1, X is al for all other conditions. 2- Implement the following function with only AND and NOT gates, F-AB+AB+BC W-XY (XZ+XY Z+ Y Z) + XZ 3- Use NAND gate, NOR gate, or combinations of both to implement the following expression:- a) X-A [B + C (D +E)] b) X B (CDE+EF G) (A B+ C) 4-a) What is the applications of AND gate and OR gate? b) In OR gate why 1 +1 1? c) The Fig. (1-12 ) shows the A & B inputs and the output is C, For the OR gate using the A and B inputs of Fig. (1-12) draw the C output for each of the following: The AND gate. • The NAND gate. • The NOR gate. .The EX-OR gate. • The EX-NOR gate. 1-121 Design and draw the logic diagram for a two-input NAND gate using one two-input AND and one NOT gate. Include the pin numbers on the gate inputs and outputs.7. Arsenic was pre-deposited by arsine gas, and the resulting total amount of dopant per unit area was 1×10¹4 atoms/cm². How long would it take to drive the arsenic into a junction depth of 1 µm? Assume a background doping of CB = 1×10¹5 atoms/cm³ and a drive-in temperature of 1200°C. For As diffusion, Do = 24 cm²/s, and Ea = 4.08 eV. 8. Assume 100 keV boron implants on a 200 mm silicon wafer at a dose of 5×10¹4 ions/cm². The projected range and projected straggle (op) are 0.31 and 0.07 μm, respectively. Calculate the peak concentration and the required ion-beam current for 1 min of implantation.
- Logic gate NAND used mainly for construction of flip-flop type: a. (S-R) Type b. (J-K) Type c. D - Type d. T - TypeV dd Q1 Q2 Q5 Q3 A -Output Q4 Q6 Write down the truth table for above logic gate with the ON / OFF status of each MOSFET and identify the gate.The following logic gate represents: a) Exclusive OR logic gate, b) NAND logic gate, c) AND logic gate. A o d) Anticoincidence logic gate, e) NOR logic gate, f) OR logic gate. D- BO
- B) Draw the logic circuit for each of the following: 3) The expression (XY + Z + XYZ + X) by using NAND gate or3-Using only NOR gates to produce the logic functions of: a-OR gate b - NOTgate c - ANDgate d-NAND gate 4-Determine the output wave form for the cct shown below ,with inputs as shown: A B Dar187. ON OUREX For the logic network shown in FIGURE Q2(c): C. 08TCD B 081OZ OBIOZ 09102 i. ii. EDB1034 67X1 d CD NYXH AL B + CD NVD NV H A FIGURE Q2(c) Derive the corresponding truth table. A(B + CD) Convert the logic network into a NAND-gate only implementation. Convert the logic network into a NOR-gate only implementation. 08102 MED MIXE D OSTO NVD D8102 NVE NVXI Al 18102 NVE NVXI ALI DORIOZ NVP NVXN DATO