Derive an expression for beta in terms of alpha

Please show me how to solve the following practice problems in step by step solution Than you so much!

Course dashboard A diode has 3 mA at 0.6 V and 210 mA at 0.75 V. Find its reverse saturation current (Is) and 1 ideality factor (7). Assume V>Vị and take VT = 25 mV. Uyg Note that because of the approximations, your result might be slightly different than the correct answer. However, it should be very close to it; hence, in that case, simply go for the choice that is closest to your result. Lütfen birini seçin: O A. Is=1.04×10,77-1.99 O B. Is=1.208X10 -10, n=1.41 O C. Is=1.7x10, 7=1.74 O D. Is=2.69×10-8, 7=1.35 O E. Ig=4.27×10-10 7=1.85 OF. Is=11.42x10-1, 7=1.29

A 1N4748A zener diode has a ZZ of 23 Ω. Taking the data from the datasheet VZ = 22 V with a test current, IZ, of 11.5 mA. What is the voltage across the zener terminals when the current is 6 mA? When the current is 20 mA? Make the representation of the values ​​by means of their curve characteristic.

Use your book or the search engine to answer the following questions in details: 1) What is a diode? 2) List at least two applications of a diode in electronic circuits a. . b. . 3) Insert the symbol of a diode below and mark the name of each terminal 4) Forward bias and reverse bias are two important characteristics of the diode, how does the diode will behave in each of them? 5) Which OrCAD library contains the diode D1N4002?

A function which represnts the movement of electrons inside a semiconductor is given as f(x,y)=xmyn, where x and y are external parameters which can be changed. If the parameter x is doubled and the parameter y is halved, then what will be the modified expression of the function f(x,y)?

SKETCH AND VERIFY THE STATE OF THE DIODE

A symmetrical Square wave of 2kHz whose voltage varies between +10V and -10V is applied to the given circuit. Find the maximum and minimum value of the voltage for the output waveform. Assume that the forward voltage and the forward resistance of the diode is 0 and reverse resistance is 2MOhm

Consider an n-type silicon for which the dopant concentration is ND = 1016 cm-3.  Find: a) The electron and hole concentration at T = 300K b) Repeat for T = 500K

The original diode equation was derived by William Shockley in 1949 to model the behaviour of germanium diodes. A few years later it was modified to account for the differences between germanium and silicon diodes by including an ideality factor n. This produced the form of the diode equation that you will now be familiar with: eV 1 = 1₁ [exp()-1] 3) Extend your analysis to extract the reverse saturation current under strong forward bias. VD (V) 0.100 0.150 0.200 0.250 0.300 0.350 0.400 0.450 0.500 0.550 0.600 0.650 0.700 lo (A) 7.47E-11 1.93E-10 6.01E-10 1.54E-09 4.26E-09 1.00E-08 2.56E-08 1.78E-07 1.13E-06 6.48E-06 ▬▬▬▬▬▬ 4.71E-05 2.74E-04 1.94E-03