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Calculate the effective density of states for electrons and holes and intrinsic carrier concentration in GaAs at 100 °C. Here, the bandgap is assumed to show no dependence on the temperature.
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- Germanium doped with 1024 m Al atoms is a semi-conductor at room temperature and each Al atom creates a charge carrier. Calculate the electrical conductivity of this material at room temperature, considering that the electron and hole mobilities are respectively 0.1 and 0.05 m/V.s.Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1x1016electron/m?) with the doping concentration of (2x1016atoms/m³) of the phosphorus and (1×1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s), the mobility for the holes (0.05m2/V.s), the electric field (100V/m), and the cross section area is 1mm?.Assume that the conduction band-offset for an AlxGa1-xAs/GaAs heterojunction is 60 % of the difference of the bandgaps of these materials. Find the composition of the AlGaAs layer necessary for the resulting heterojunction to have an energy barrier for the electrons equal to 0.3 eV. Calculate the energy barrier for the holes. Sketch the energy band structure for this heterostructure for the given composition. What type is the heterostructure?
- Assume that the conductivity of a pure semiconductor at an applied electric field of 450 mV/m is 2.75 X 1013/Ω-cm. Given that the drift velocity of electrons is 0.135 m/s and that of holes is 0.048 m/s, determine the density of the charge carriers per cubic meter in this material. Round-off up to 4 decimal places for the entire solution till the final answer.Consider a 100 Ǻ GaAs/AlGaAs quantum well where the electron effective mass is 0.067 m0. There are 2 x 1012 electron/cm2 in the well. At low temperatures, calculate the magnetic field at which the Fermi level just enters the third Landau level of the ground state sub-band.Q.4:A p-n Junction has electron mobility 0.13 m'v's", thermal velocity is 30 mV, the doping concentration in the p-side is (10 m and 10 m), life time for holes-10 us, and hole diffusion length is 1.5*10 m. Calculate the total conductivity in p-region.
- What is the probability of an electron being thermally promoted to the conduction band in silicon (Eg = 1.07 eV) at room temperature (25°C)?Q/ A (10 KQ) resistor is made of two strips connected in parallel, each one has (40 um) thick, and (6 mm) long. One strip is of intrinsic germanium and has (0.5 mm) wide. Determine the width of other strip if it made of Ge., doped with (10²) donor atom/cm',at the working temperature. The intrinsic carrier density of Ge, is (2.5 x10"m), and the electron and hole mobilities are (0.4 m?/V.Sec. , and 0.2 m/V.Sec.) respectively.A silicon n+-p-n transistor has impurity concentrations of 1019, 1018, and 1017 cm 3 in the emitter, base, and collector, respectively. Calculate the collector current density, Jc in the transistor with VF = 0.2V and neutral base width equal to 5 x 103 cm. Next, find the collector current density, Jc for the 2nd design nt-p-n transistor that the neutral base width has been decreased by 20%.
- A nondegenerate silicon sample at room temperature with a length of 2 cm is uniformly doped with boron (B) atoms. Electric field 5 V/cm produces a current density of 0.8 A/cm? through this sample. Sample cross-sectional area is 0.1 cm?. Hn= 4000cm2/V-s H,= 1000 cm?/V-s. Calculate the majority carrier concentration. Please write your answer as a cm-3 and don't use units in the answer.At 25°C, the electrical resistivity of an intrinsic Gallium Arsenide (GaAs) is 0.042 ohms.cm and the bandgap energy is 0.85 eV. Calculate the electrical conductivity of GaAs at 70°C. (k= 8.62 x10-5 eV/K)Suppose a pure Si crystal has 5 × 1028 atoms m-3. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Given that ni =1.5 × 1016 m-3.