Q1. T= 300K. Use n, = 1 x 101 cm. %3D A silicon sample doped with ND=4 x 1015 cm , and NA=2 x 10 cm. (i) The majority and minority carrier concentrations are: (ii) The equilibrium Fermi level position with respect to Ei are: (iii) Later the sample is steadily illuminated such that the excess carrier concentrations are equal to the 15% of the above equilibrium majority carrier concentration. The quasi-Fermi levels positions with respect to the intrinsic Fermi level are:

Q1. T= 300K. Use n, = 1 x 101 cm. %3D A silicon sample doped with ND=4 x 1015 cm , and NA=2 x 10 cm. (i) The majority and minority carrier concentrations are: (ii) The equilibrium Fermi level position with respect to Ei are: (iii) Later the sample is steadily illuminated such that the excess carrier concentrations are equal to the 15% of the above equilibrium majority carrier concentration. The quasi-Fermi levels positions with respect to the intrinsic Fermi level are:

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter10: Statistical Physics

Section: Chapter Questions

Problem 15P

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ASAP
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