A nondegenerate silicon sample at room temperature with a length of 2 cm is uniformly doped with boron (B) atoms. Electricfield 5 V/cm produces a current density of 0.8 A/cm? through this sample. Sample cross-sectional area is 0.1 cm?.Hn= 4000cm2/V-s H,= 1000 cm?/V-s.Calculate the majority carrier concentration.Please write your answer as a cm-3 and don't use units in the answer.

A nondegenerate silicon sample at room temperature with a length of 2 cm is uniformly doped with boron (B) atoms. Electric field 5 V/cm produces a current density of 0.8 A/cm² through this sample. Sample cross-sectional area is 0.1 cm?. Pn= 4000cm²/V-s µp= 1000 cm²/V-s. Calculate the majority carrier concentration.

A nondegenerate silicon sample at room temperature with a length of 2 cm is uniformly doped with boron (B) atoms. Electric field 5 V/cm produces a current density of 0.8 A/cm² through this sample. Sample cross-sectional area is 0.1 cm?. Pn= 4000cm²/V-s µp= 1000 cm²/V-s. Calculate the majority carrier concentration.

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 12P

See similar textbooks

Similar questions

Conduc-Thor-s. Thor has two square prism conductors that are made of the same ohmic material and with properties indicated below. Conductor Length Cross-Section Side Length Alpha Beta L/2 8/4 Suppose both conductors are subject to the same potential difference AV across their length while keeping their temperatures fixed. Which of the following is the correct relation between the electric currents, I, and Ig, through Aipha and Beta? O A. I = 81, %3D O B. 8I. = I3 Oc. Ia = 413 O D. 4la = I3
Q6/ a- Find the conductivity and resistivity of intrinsic Ge at 300K. b- If n-type impurity is added to the extent of one atom per 10° germanium atoms, find the conductivity and resistivity. Assume the following data; n¡ = 2.5 x 1013 cm-3, Hn = 3800- cm2 V. Sec' cm2 and Number of germanium atoms/ cm3 Hp 1800: V. Sec' = 4.4 x 1022.
An AL wire with an atomic mass of 26.98 g/mole with a cross sectional area of 4 x 10-6 /m2 carries a 5Acurrent. Find the drift velocity of the electrons in m/s through the wire, assuming that each Al atomcontributes an electron. The density of Al is 2.7 g/cm3.
Problems Q1: Calculate the drift current density in silicon sample. If T=300 K, N=102/m*, Na=102/m’V, un=0.85m’/V.s, Up=0.04m/V.s, E=35 V/cm.. (Ans: 6.8×104A/m²).
Silicone material at 10^18(cm^3) has an n-type additive and a 10ohm resistance. The sample area is 10^-6(cm^2) and its length is 10µm. What is the doping yield of the sample? (µn=800cm^2/V-s)
use: n-101°cm, Eg 1.1eV, Ho 1000 cm2/V.s, Ho-250cm?/N.s, KT=26meV, q 1.6x10-19 C, Eg- 12 and Eo-8.85x10 14 F/cm. In Fig. 1 Find the electron diffusion current density at x 1um Ee B [0.45eV E Er 0. 0.5 ja Fig. 1 O a. 0.065A/cm2 O b. 0,82A/cm2 Oc 9.7x10 A/cm? O d. 0.487A/cm
Copper has mass density of 8.95 g/cm^3.and electrical resistivity of 1.55×10^-8 ohm.m at room temperature. Assuming the effective mass is mo. Calculate . a) the concentration of the conduction electrons. b) electrical conductivity.
A germanium diode is used to detect radiation with energy of 1.6 MeV. To do so, the anode (positive terminal) is exposed to the incoming radiation. Assume that the energy is absorbed entirely at the point of entry or the anode. With mobilities of 1,150 cm?/V.s for holes and 3,750 cm?/V.s for electrons, calculate the current through the diode with reverse bias: V = 24 V and d = 12 mm. Neglect the effects of electrodes and 4. of the n and p layers and assume a single radiation event, that is a single particle or a short burst of radiation. (Charge of an electron = 1.602 x 10-19 C; d is the distance between anode and cathode).
Q/A current of 0.5 A flow through germanium strip with length of 4 mm and rectangular cross-section of 1 x 5 cm. Calculate the time taken for electrons to travel across the length of the germanium strip. Given that the resistivity of the germanium strip equal to 4 (n. cm) and the electron mobility equal to 0.5 m² V. Sec O C O T= 20 mSec T = 0.2 µSec Ob T = 0.2 mSec Od T = 20 µSec
The intrinsic carrier concentration of silicon (Si) is expressed as - E n₁=5.2×10¹5T¹.5exp- i electrons at 30°C. n = cm -3 g 2kT cm -3 where Eg = 1.12 eV. Determine the density of Round your answer to 0 decimal places.
1 (a) Using Townsend's second ionization criterion, consider I, 4 x 10-7 A. Consider a = 2.28/cm. If y = 0.0075, find the gap spacing dspark in cm for spark breakdown criterion. Calculate the current I in A for (i) d = 0.45 xdspark , (ii) d = 0.6 x dspark and (iii) d = 0.8 x dspark Show that the current I = Io exp (ad) when d is very small value and y is also very small value. 1,ead 1- y(ead – 1) (b) For a point-plane gaseous dielectric system, suppose values of a = 2.24 / cm and y = 0.0064. d Find the values of for d = 1.25 cm and d = 1.95 cm. dd
A Langmuir probe of area 3.2 x 10-5 m2 measures an ion saturation current of 0.042 mA in an argon plasma with an electron temperature of 3.5 eV. Calculate the plasma density at the sheath edge. Take the argon atomic mass as 40 u. Give your answer in SI units