A PN silicon diode has ND = 10¹8 cm³ and N₁ = 10¹6 cm³, Tp = Tn = 1 µs and A = 1.2x10 cm². Determine: a) The reverse saturation current. b) The current when the applied voltage in the forward direction is 0.7 V. c) The current when the applied voltage in the reverse direction is 0.02 V.
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- The current measured in the circuit formed by using the ideal diode model is. Please choose one: a. 1.2 mA b. 0.87 mA C. 0.73 mA D. 0.80 mA 13:19 30.04.2021A germanium diode has a current reaches 80% ofits saturation point at 115°C. Calculate the voltage and the ratio of the current for a forward bias of 0.8V to the current for the same magnitude in reverse bias when the temperature rises to 165°C.Consider a silicon pn junction diode at T 300K. The reverse saturation current is Is = 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.573 V and use that to determine the DC and AC resistance of the diode. RDC = 14.13 k rac = 639 Q RDC = 234 Q2 = rac=8Q RDC = 7.00 KQ rac = 307 Q RDC = 1.43 kQ rac = 58 Q
- A silicon diode has a reverse saturation current of 50nA at room temperature (25degrees centigrade). If the operating temperature is raised by 50-degrees centigrade, what is now the reverse saturation current?A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 AuO 9:.0 A docs.google.com * ZAIN IQ l. Q3/B: Assume an ideal diode model for all the diodes in the circuit below. calculate voltages and currents through D1 and D2 9kQ 1N1199C R2 D1 18KQ 1N1199C D3 1N1199C V2 =12 V R3 1kQ R4 5kQ 1.22 V 11 mA 0.5 A O VD1 ID1 VD2 ID2 صفحة 4 من 6
- True or False. Please explain. thank you As the temperature increases, the forward voltage decreases in a silicon diode. Then, the graph of the forward bias region will shift to the left.A silicon diode has a forward voltage drop of 1.2V for a forward DC current of 100mA. It has a reverse current of 1μA for a reverse voltage of 10V. Calculate the: a. Bulk resistance b. Reverse resistance c. AC resistance at forward DC current of 2.5mAWhen a conventional Silicon diode is reversed-biased with a voltage high enough such that there is a very large current present, the voltage value this occurs at is referred to as the: a) Breakdown voltage b) Breakup voltage c) Hammer voltage d) Roller voltage O b O d O c a o o o o
- Consider the circuit in the figure below 4:1 120 V rms ooooo gll reelee D₁ L a. What type of circuit is this? b. What is the total peak secondary voltage? D₂ c. Find the peak voltage across each half of the secondary. d. Sketch the voltage waveform across RL. e. What is the peak current through each diode? f. What is the PIV for each diode? RL 1.0 ΚΩConsider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?Calculate the currents passing through the diodes D1 and D4 in the circuit given below. (All diodes are silicon).