A piece of Si doped with 1016 cm-3 Boron atoms. At T-300 °k, the hole concentration is (a) 10¹6 cm-3 O a с Ob (b) 104 cm-3 (c) 1020 cm-3 (d) 10¹2 cm-3

Q: Determine the hole concentration in gallium arsenide at T = 300K given an electron concentration of…

A: For gallium arsenide -

Q: Calculate the voltage at 1.5T (milliseconds) for the following RC Circuit. Assume switch is closed…

A: Calculate the voltage at 1.5T (milliseconds) for the following RC Circuit. Assume switch is closed…

Q: Assume each diode to be OFF when V₂ ≤ 0.7V and ON when VĎ >0.7V. Find iD1, İD2, İD³, and vō in each…

A: Given:a circuit,when , the diode is off. when , the diode is on. Find:iD1, iD2, iD3 and v0.

Q: In the below germanium type PN Junction, how much minimum voltage is required to move charge…

A: Given, germanium type PN junction,

Q: How much work is done by a 12-V automobile battery in moving 5x100 electrons from the positive…

A: We need to find work done for given voltage and charge .

Q: Two parallel wires made of copper are placed in air. The inductance of each wire is 0.9 µH/m with…

A: Two parallel wires made of copper are placed in air.  Total inductance L= 0.9uH/m What is the…

Q: A3-nF capacitor with a 12-uC charge on it is discharged through a 3-kO resistor. What is the current…

A:

Q: m²/s, and 8(0)-105 cm³. The on [cm³] at x=75 um is....

A: Given Data: P-Type silicon Temp, T= 300K Na = 5 x 1016 cm-3 τn0 = 5 x 10-7 s Dn = 30 cm2 /s δn(0) =…

Q: Calculate Vx and Ix in the following circuit, using approximation technique. Assume that the diode's…

A: The circuit diagram,

Q: The voltage across the capacitor the current through it by leads, O deg O lags, 90 deg O lags, 45…

A: For capacitor current = Voltage VImpedance Impedance of capacitor = 1jwc…

Q: VCE at B=80 of the silicon transistor shown in the figure below is equal to 15V VCE 6.58 V 7.575 V…

A: Given,

Q: Problem 10 In the circuit below, the diodes D1 and D2 are and respectively (state ON / OFF) 5 V + 3…

A: Firstly, determine the open circuit voltage across the diode, and subsequently, identify the diode…

Q: The electron transition from the metastable state to the ground state of a ruby What is the energy…

A: We need to find out energy difference

Q: 2.27 A diode is made by using an n-type Si substrate (Np = 4.0 × 1015 cm-3) and then adding…

A: We need to find electron and concentration in p side of a diode .

Q: Question 18 The charge on Capacitor C3 is 41 HC. Determine the value of Vs. 10 uF C2 = 20 uF C3= 10…

A: Redrawing the circuit with the given points:

Q: Determine the Anode to cathode voltage of a certain 4- layer diode which is biased in the forward-…

A: Given, 4-layer diode is in forward blocking mode. Anode current (Ia) = 2.5 uA Resistance of the…

Q: Determine the current at the collector

A:

Q: How many capacitors are used in a diode-capacitor half- wave voltage doubler? 2 An improvement of a…

A:

Q: If R is 10k, and Is for the diode is 2x10-14A, what is Vo when Vi=0.6V? R iz vj = 0 ip Oa어

A:

Q: Calculate Po 300K when the Fermi energy is 0.35 eV above the valence energy band. for silicon at T =…

A:

Q: For the circuit shown find the maximum and minimum values of zener diode current. 5kQ2 IL I 80-120 V…

A:

Q: Determine the forward voltage and forward current for the diode for each diode models. Also, find…

A: The circuit diagram is shown below,

Q: Calculate no for germanium at T = 300K when the Fermi energy is 0.55 eV below the conduction energy…

A:

Q: Find the potential energy for an electron having total energy of -4eV in the third energy level. O…

A: What is potential energy If the total energy = -4eV We know  Total energy = potential energy /2

Q: The value of capacitor increases with O increase in the thickness of insulating material decrease in…

A: Given  The value  of capacitor  increase with

Q: A p-type silicon sample in a non-equilibrium state has a majority carrier concentration po = 1015…

A:

Q: 1. A diode is hooked up to an IV analyzer as shown and the analyzer produces the graph below. Based…

A: The diode have a two terminal and it is a semiconductor device. It is used to allow the current in…

Q: Find the values of the intrinsic carrier concentration ni for silicon at 77°C. O carriers/cm3 5.5 x…

A:

Q: What is the voltage, vp, across the diode? 3 0 6 V VD 9 V ip O 9.0 V O 6.0 V O OV O 7.71 V

A: Given:  Brief description: In the given question they have mentioned an electrical circuit having…

Q: Draw the output voltage for the Vi below for 1 period. (Note: The used diode is a silicon diode, and…

A: It is given that the diode used is not the ideal one. So the voltage across the diode in the forward…

Q: A diode has IS = 10−17 A and n = 1.05. (a) What is the diode voltage if the diode current is 70 μA?…

A: Hello. Since your question has multiple sub-parts, we will solve the first three sub-parts for you.…

Q: In the measurement of unknown inductance ,in bridge achieving condition of balance is difficult.

A: AC spans are frequently used to quantify the estimation of obscure impedance (self/common inductance…

Q: Calculate the built-in potential barrier, Vbi, for silicon with Ng = 1014 cm-3 and Nd N₂ = 1017…

A: Given:

Q: Solve I and V. Assume all diodes have cut-in voltage, Vy=0.7.

A: The given circuit can be analysed by considering the state of the diode and then by applying…

Q: In the circuit below, when a 2.2KN load is connected to the output, find the value of the current…

A:

Q: What are the breakdown voltage VZ and Zener resistance RZ of the diode depicted ?

A: Given:  The diode characteristics can be shown as:

Q: A silicon diode with forward bias voltage of 0.4 V at T=300 K has l=4 µA. The reverse saturation…

A: Thermal voltage is given by , Where k= boltzmann's constant =1.38*10-23             T=300K…

Q: The thermal equilibrum concentration of the electron at T=300K in silicon is n0=5*10^4cc. What is…

A: The solution can be achieved as follows.

Q: 18. Determine the voltage a. 2.0 kV across a 1000pF capacitor to charge it with 2µC. 25 JJI

A:

Dielectric Breakdown

A dielectric is a material with low electrical conductivity and so is classified as an insulator. Dielectric materials are used to block the flow of electricity through them, allowing them to behave as an insulators. They can also be used to store electric charge or improve capacitance.Dielectrics have no free electrons for conduction because electrons are tightly bound to the nucleus. Because dielectrics contain a small number of electrons for electrical conductivity, they have a dipole. The two primary roles of dielectrics in electrical devices are insulation and electrical energy storage. An electric field polarizes the dielectric, and the polarization of the molecules allows dielectric materials to store charge.