A p-type silicon sample in a non-equilibrium state has a majority carrierconcentration Po = 1015 cm-3. The minority carrier lifetime is found to be 40ps. What is the generation rate of excess carriers?OG = 5.63 X 10° s-1OG = 2.88 X 108 s-1OG = 1.44 X 107 s1%3DOG = 1.13 X 108 s1

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A p-type silicon sample in a non-equilibrium state has a majority carrier concentration po = 1015 cm-3. The minority carrier lifetime is found to be 40 us. What is the generation rate of excess carriers? OG = 5.63 X 10° s-1 OG = 2.88 X 108 s-1 %3D OG = 1.44 X 107 s-1 OG = 1.13 X 108 5-1 %3D

A p-type silicon sample in a non-equilibrium state has a majority carrier concentration po = 1015 cm-3. The minority carrier lifetime is found to be 40 us. What is the generation rate of excess carriers? OG = 5.63 X 10° s-1 OG = 2.88 X 108 s-1 %3D OG = 1.44 X 107 s-1 OG = 1.13 X 108 5-1 %3D

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

A p-type silicon sample in a non-equilibrium state has a majority carrier
concentration Po = 1015 cm-3. The minority carrier lifetime is found to be 40
ps. What is the generation rate of excess carriers?
OG = 5.63 X 10° s-1
OG = 2.88 X 108 s-1
OG = 1.44 X 107 s1
%3D
OG = 1.13 X 108 s1

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