1 300° k, if the conductivity is onductivity of 0.1l per ohm per D0 cm2/v-s, and for Silicon

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Chapter12: Electronic Control Devices
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(1-7) Find the concentration of holes and electrons in a p-type Germanium at 300° k, if the conductivity is
per ohm
cm .given for Germanium n;-2.5×1013/cm³ Hn=3800 cm2/v-s, up=1800 cm2/v-s, and for Silicon
n=1.5x1010/cm', un=1300 cm?/v-s, Hp=500 cm?/v-s
per cm. Also find these values of N- type Silicon, if the conductivity of 0.1 per ohm per
Transcribed Image Text:(1-7) Find the concentration of holes and electrons in a p-type Germanium at 300° k, if the conductivity is per ohm cm .given for Germanium n;-2.5×1013/cm³ Hn=3800 cm2/v-s, up=1800 cm2/v-s, and for Silicon n=1.5x1010/cm', un=1300 cm?/v-s, Hp=500 cm?/v-s per cm. Also find these values of N- type Silicon, if the conductivity of 0.1 per ohm per
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