3. Provide a cross-section process flow to result the gold micropillar-array electrode as shown in the figure below starting from a <100> bare silicon substrate (the cross section flow should include fabrication of two micropillars). If you are using photolithography, please provide cross-section of your optical masks with clear indication of transparent and opaque region based on the type of your photoresist. Silicon dioxide and the bottom gold layers are 1 μm and 200nm thick, respectively. The diameter and height of each pillar is 5 μm and 10 um, respectively. The spacing between the pillars is 20 μm. You are only allowed use one of the given processes below for your process flow. PECVD Sputtering Electroplating Thermal oxidation Photolithography (photoresist thickness available from 1.5 um to 13um) DRIE RIE Gold Silicon Dioxide Silicon

Electric Motor Control
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Chapter59: Motor Startup And Troubleshooting Basics
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3. Provide a cross-section process flow to result the gold micropillar-array electrode as shown in the
figure below starting from a <100> bare silicon substrate (the cross section flow should include
fabrication of two micropillars). If you are using photolithography, please provide cross-section of
your optical masks with clear indication of transparent and opaque region based on the type of your
photoresist. Silicon dioxide and the bottom gold layers are 1 μm and 200nm thick, respectively. The
diameter and height of each pillar is 5 µm and 10 um, respectively. The spacing between the pillars
is 20 μm. You are only allowed use one of the given processes below for your process flow.
PECVD
Sputtering
Electroplating
Thermal oxidation
Photolithography (photoresist thickness available from 1.5 um to 13um)
DRIE
RIE
Gold
Silicon Dioxide
Silicon
Transcribed Image Text:3. Provide a cross-section process flow to result the gold micropillar-array electrode as shown in the figure below starting from a <100> bare silicon substrate (the cross section flow should include fabrication of two micropillars). If you are using photolithography, please provide cross-section of your optical masks with clear indication of transparent and opaque region based on the type of your photoresist. Silicon dioxide and the bottom gold layers are 1 μm and 200nm thick, respectively. The diameter and height of each pillar is 5 µm and 10 um, respectively. The spacing between the pillars is 20 μm. You are only allowed use one of the given processes below for your process flow. PECVD Sputtering Electroplating Thermal oxidation Photolithography (photoresist thickness available from 1.5 um to 13um) DRIE RIE Gold Silicon Dioxide Silicon
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