A one cm3 sample of a hypothetical material with conductivity of 108 (Ohm-meter) 1 is formed into a 10 cm wire. The material contains 1022 atoms per cm3. Calculate the electron drift velocity when the wire carries an electrical potential of 100 V.

a) For the given silicon semiconductor resistance of radius =1mm and height = 100mm, shown below, find the electric current, I. Consider silicon at T= 300K doped with phosphorus atoms at a concentration of ND= 1.5 x 1010 cm3. Assume mobility values of un = 1350 cm?/N-s and up =480 cm2/V-s. Assume the applied voltage, V=5V. [Given Band Eg for silicon are 5.23 x 1015 cm3 K 3/2 and 1.1 eV respectively, and q=1.6x10 19 C, K=86x106, mm= 10 m) b) If the temperature is increased to 350K, what the battery voltage value needed to keep the same current value as in (a). ) Find the majority and minority carrier concentration values at T=350K. Silicon Np Write final answer below (upload detailed answer): a) l= b) V= c) Majority carriers are.. Majority carriers concentrations [cm-3]= Minority carriers are.. Majority carriers concentrations [cm-3]=