A MOS current mirror is shown below. For matched transistors Q₁ and Q2, with W/L =20, μnСox = 300 µA/V², and Vtn = 0.4 V, design a current mirror to provide a current output-10 160 μA with VDD = 2.0 V. Neglect the effect of channel-length modulation. Find:a) The value required for R in the current IREFb) The minimum value that V can have while Q2 still operates in saturation.VDDIREFRIDIVGS+1 310|11Q2Vo

a) 8556.875 ohmb) 0.2309 VExplanation:Step 1:Step 2:

Answered: A MOS current mirror is shown below.…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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a) The reason of high input resistance of the MOSFET is: 1. The insulator layer. 2. The reverse biasing. 3. The forward biasing. b) Which transistor has no Ipss parameter?. 1. JFET. 2. E-MOSFET. 3. D-MOSFET. c) For an n-channel D-MOSFET transistor, at what condition can gm be greater than gmo?. 1. Vas is positive. 2. VGs is negative. 3. VGS=0. d) A certain amplifier has an Rp 1K2. When a load resistance of 1K is capacitively coupled to the drain, the gain will reduce to the: 1. Half. 2. Quarter. 3. Not change.
On a VCE - Ic graph: a) Draw a load line for a BJT transistor, and show the change of Q point with three different IB values. (IBI< IB2 < IB3) (Q1 , Q2 , Q3). Explain the reason for the changes shortly. 4) b) Draw the load line and show the change of Q point with three different Rc (Rci< Rc2< Rc3) values (IB constant). Explain the reason for the changes shortly.
2) Using the electrical characteristics data provided for 2N7000G n-channel mosfet, determine the following: 5M i) the K value for the mosfet. ii) Sketch the Transfer characteristics show all your calculation steps clearly.
Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layers
In the circuit given below, M1 and M2 transistors operate in the saturation region and the channel length modulation coefficients are given as An and hp (for roN and roP). (a) Describe whether the transistors are connected in series or in parallel by drawing the small signal equivalent of the circuit (those who write only series or only parallel without explanation will not be awarded) (b) How much will the voltage gain of the circuit? VD HEM2 Vino o Vout M1
On a VCE - Ic graph: a) Draw a load line for a BJT transistor, and show the change of Q point with three different IB values. (IB1< IB2 < IB3) (Q1 , Q2 , Q3). Explain the reason for the changes shortly. 4) b) Draw the load line and show the change of Q point with three different Rc (Rci< Rc2< Rc3) values (IB constant). Explain the reason for the changes shortly.
For the NMOSFET in the circuit below, K = 2.00mA/V2, VTHN = 1.00V, l = 0.05V-1, and VIN = 3.50V. a. Draw the large signal model of the circuit and the small signal model. b. Solve for IDS and VOUT and verify any assumptions you made. c. Calculate the small signal gain of the circuit, vout / vin .
On a VE - Ic graph: a) Draw a load line for a BJT transistor, and show the change of Q point with three different Is values. (ai< Ia2 < Is3) (Q1 , Q2, Q2). Explain the reason for the changes shortly. 4) b) Draw the load line and show the change of Q point with three different Rc (Rci< Rc< Rc3) values (Is constant). Explain the reason for the changes shortly.
On a VCE - Ic graph: a) Draw a load line for a BJT transistor, and show the change of Q point with three different IB values. (IB1< IB2 < IB3) (Qı , Q2 , Q3). Explain the reason for the changes shortly. 4) b) Draw the load line and show the change of Q point with three different Rc (Rci< Rc2< Rc3) values (IB constant). Explain the reason for the changes shortly.
Derive the expressions for gmb and gd for a MOSFET
VcC R2 RC- RI RL R1 RE VEE Assume: B=100, VA=150, Vcc=12V, VɛE=GND, R=2K, R1=160K, R2=300K, Rɛ=3K, Rc=2.2K, and R1=100K. A.)For the circuit draw the AC equivalent circuit (including the small signal model for the transistor). Then compute r„, ľo, and gm. Then compute Av (the gain for the entire circuit), and Rin (for the whole circuit). B.)Convert the circuit to a common-collector circuit. Draw the new circuit (assume the same values for the input and load resistances). Then compute the terminal voltage gain, and Rin (for the whole circuit), re-computing any parameters that you need to solve.
= 100 1) Use the Ebers-Moll model to determine Ic for an NPN BJT biased at IB nA and VCE 0.10 V. Assume that the Ebers-Moll model parameters are 2.25x10-16A, a. IFO b. IRO 8.95×10-16A, and = c. αF 0.994. 2) Calculate BR and BF for a bipolar transistor described by an Ebers-Moll model with a. IFO 1.45 x10 16A, b. IRO 5.77x10-16A and c. αF 0.995

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