Answered: a- Analyze the DTL circuit shown.…

a- Analyze the DTL circuit shown. Assume VBE (sat) =0.8 V, VCE (sat) = 0.2 V, and the drop across a conducting diode=0.7 V. b- If β=25, calculate the fan out.

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

See similar textbooks

Related questions

Q: An ideal rectifying contact is formed by depositing gold (m = 5.10 cV) on an Np - 10-/cm doped…

Q: Prior to the availability of Schottky diodes, theBaker clamp circuit as shown was used toprevent…

A: Assuming vD1 = vD2, From the given circuit,

Q: 2. A PIN photodiode uses an InGaAs, 4-um-thick intrinsic region which is doped to a level of 1021 m.…

A: 2. Given data is The depletion width of intrinsic region is WD=4μm The doping level is ND=1021 m-3…

Q: Q1. Identify True or False: a. Forward resistance r, and diffusion resistance r, are same in the…

A: Here Some statement are given and we have to find true or false statement

Q: Given a Si sample of unknown doping, Hall measurement has been made and thefollowing information…

Q: step-down transformer supplies 25Vrms to a simple half wave rectifier power supply which is…

Q: Design a voltage regulator circuit to provide a constant voltage of (12 V) across a load resistance…

A: The circuit diagram for the above mention details is given as Thus from the given from the minimum…

Q: Reg. No = 26 Calculate the forward current for the diode circuit as shown in the given figure,…

A: To find the forward current for the diode circuit

Q: Consider a gallium arsenic (GaAS) sample at T=300 K,with doping concentrations of NA=1017 cm-3 and…

A: Solution : Given: From the given doping concentration the doping concentration of acceptor is…

Q: Consider the circuit and parameters illustrated above. If a derating factor of 12% is sugested then…

Q: Q1. Calculate the drift current density in a gallium arsenide sample at T-300 K, with doping…

A: Gallium arsenide semiconductor Electric field E= 10V/cm= 1000V/m ND = 1022 m-3 un = 0.85m2 /V…

Q: thick. The insulator above the floating gate has a dielectric constant of 8 and is 100 nm thick. If…

A: We have given the floating -gate non volatile memory device the lower insulator has a dielectric…

Q: Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is…

A: Given That T=300Kni=1.5×1010cm-3 doping in n region =1020cm-3doping in p region =1019cm-3forward…

Q: 4670V = Vs R = 200kΩ C = 0.1μF Consider the circuit and parameters illustrated above. If a…

Q: Q1 Figure Q1(a) is a full wave bridge circuit with a capacitor filter and the output waveform…

A: Full wave bridge rectifier- Full wave bridge rectifier is a combination of four diode which are…

Q: Why the gate and cathode of GTO are interdigited? O a. Maximize cathode periphery O b. Create space…

A: The gate and cathode of GTO are interdigited To maximize cathode periphery To minimize the distance…

Q: QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode with (100…

Q: What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2…

A: Given,Area A=100 micron2=1002 micron2 A=1002×10-42…

Q: Problem 1. We have identical crystalline silicon solar cells available, with a short circuit…

A: Given data, Number of cell n = 54. Short circuit current Isc=4 A Open circuit voltage Voc=0.6 V

Q: 1- How do we control the collector current when npn transistor is working in saturation? Explain. 2-…

A: Since you posted the multiple questions, so according to guidelines we have to supposed to answer 3…

Q: Consider the circuit of Figure 2.1 using Vcc = 12 volts, Rb = 220 kΩ and Rc = 1 kΩ. Determine the…

A: In the question, Vcc = 12 volts, Rb = 220 kΩ and Rc = 1 kΩ. Determine the ideal end points of the…

Q: In the Zener regulator shown, the Zener diode has the parameters V = 5.2 V, r, = 20 Q, 1, =0.5 mA 20

A: A Zener diode has a low Reverse breakdown voltage and gives a constant output voltage when operated…

Q: 6.) The equilibrium electron concentration in GaAs at T = 375 K is 3.0 × 10¹6 cm -3 (a) Determine…

Q: Question 2 a) Briefly explain the de chopper, inverter, controlled rectifier and ac voltage…

A: Controlled rectifier.

Q: R1 + Vx Considering the given circuit, Vz = 8.5 V @8 mA, R, = 0.75 k2, V, = 20 +4 V, and rz = 45 N.…

A: In the regulator circuit. Find the value of the minimum current in the zener diode.

Q: A conductor carries a current that maybe regarded as equivalent to the sum of wo components, one of…

A: Disclaimer: Since you have asked multiple questions, we will solve the first question for you. If…

Q: Consider the circuit and parameters illustrated abova. Ifa darating factor of 12% is sugested then…

Q: Suppose a Schottky barrier diode can be modeled by the diode equation in Eq. as shown with IS =10−7…

A: Let the value of of voltage VT = 0.025 V. a) Given data, The value of current is IS = 10-7 A. The…

Q: 1- The basic building block of MOSFET is the Gate-drain-source. (T/F) 2- Define drift velocity of…

A: 1) Basics building block means symbol of MOSFET it generally have three terminals

Q: What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2…

A: We are authorized to answer one question at a time, since you have not mentioned which question you…

Q: a- Analyze the DTL circuit shown. Assume VBE (sat) =0.8 V, VCE (sat) = 0.2 V, and the drop across a…

A: The given circuit is as shown below :

Q: A uniform bar of n-type silicon of 2 um length has a voltage of 1.75V applied across it. If No - 1.0…

A: Since you have posted a question with multiple sub-parts, we will solve first three sub-parts for…

Q: 4. AP'N abrupt junction silicon diode has Na = 10" cm and Np= 5x1015 cm. Given 7, (in N) = 0.1µus,…

A: A PN junction refers to a combination of PN layers inside a semiconductor material.A PN abrupt…

Q: Q6/Consider n-type silicon at T=300 K doped with arsenic. Determine the maximum doping at which the…

Q: For a silicon abrupt junction with NA 1018 cm3, Emax 300K), calculate the n- type doping…

A: Given that,

Q: 3.2 Calculate the value of n, for gallium arsenide (GaAs) at 7- 300 K. The constant B- 3.56 x 10"…

Q: II- Determine the Vautr from the reverence cold junction LM335 if the temperature of the environment…

A: cold junction with LM335 Temperature T=20°C=293 K It is given that VoutToTo=10 mV/K…

Q: If the DC bias voltage, Vd, across a forward biased PN junction is equal to 701 mV then what is the…

A: Given Vd=701mVIo=saturation current = 3×10-15AVt=26mVIf diode is forward bias (cut-in voltage…

Q: ton sider Dm= 4. SSV and n type silicon doped to No = 10" cm? at Sook. Given Nc csi)=28x1019 cm? and…

A: Given: ϕm=4.55V N=1016cm-1 T=300K x=4.01

Q: Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is…

A: We need to find out minority charge carrier density for given diode .

Q: An ideal photo-diode of unit quantum efficiency, at room temperature, is illuminated with 8 mW of…

A: The total current is given by the standard diode equation,

Q: Consider a P+N junction diode with Nd = 1016 cm–3 in the N region. (a) Determine the diffusion…

Q: A centre-tap full-wave rectifier (CT-FWR) is operated from a (60 Hz), (110 Vrms) line voltage…

A: Thank you for the question. Your question consist of multiple sub-parts, as per company policy I…

Q: 10. An ac voltage source of V max = 120 V is rectified using a half-wave rectifier circuit, using…

Q: Hall measurement is conducted on a silicon sample of unknown doping with W= 100cm, A 2.5 x +150mV is…

A: Hall coefficient is calculated as follows:

Q: Rizlosz Egalov TR, = 3052 Is= 2A considered' ieteal, using first model of approximation , diodes the…

Q: Design a center-tapped full-wave Rectifier Circuit to provide an output of 100 VDC. Then calculate…

Concept explainers

HVDC

HVDC stands for high voltage direct current in the electric power transmission system. The high voltage direct current system uses direct current (DC) for the transmission of electrical power through transmission lines in contrast with the alternating current that is the AC system. The HVDC is used to transmit bulk power point-to-point through long distances transmission lines. Power is rapidly transferred because the efficiency of transmission lines is greatly increased over long distances due to HVDC lines.

Question

a- Analyze the DTL circuit shown. Assume VBE (sat)
=0.8 V, VCE (sat) = 0.2 V, and the drop across a
conducting diode=0.7 V.
b- If β=25, calculate the fan out.

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

This is a popular solution!

SEE SOLUTION Check out a sample Q&A here

Step 1Given;

VIEW

Step 2 solution;

VIEW

Trending now

This is a popular solution!

Step by step

Solved in 2 steps

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

Find the range of values that will keep the zener diode “on” (operating) in the figure. (Plot the Vy-Vi graph).
29. Does an increase in reverse bias for a Varactor diode cause an increase or decrease in capacitance? 30. If the load current through a SCR (Thyristor) reduces to almost zero, what will be the result?
Given the clamper circuit below, assume that the value of R and C are large enough sothe voltage across the capacitor does not change significantly during the interval of time.a. Using the simplified diode model, simulate the action of the circuit when the Silicon diode isin forward and reverse bias condition and measure the corresponding output voltage.b. Draw the complete output waveform of the circuit
In the circuit given in the figure, since Vi is a square wave with a frequency of 1 kHz and an amplitude varying between +5V and -5V; Vi and Vo voltages one after the other and in scale; a) Draw with Zener diode is not active ? b) Draw with the Zener diode on? (Assume the diodes in the circuit are ideal)
For the circuit shown in Figure, consider Ideal diodes. If Vs = 19sin wt, Vb = 4 V, the minimum value of output voltage is: Vout at of estion Vs Vb Oa. -4 V Ob. -15 V Oc. -19 V Od. 4 V
Q1 Figure Q1(a) is a full wave bridge circuit with a capacitor filter and the output waveform produced by the circuit is shown in Figure Q1(b). Assume all the diodes in the circuit have a forward voltage of 0.7 V. (a) (b) Sketch the waveform in A, B, C and D as shown in Figure Q1(a). Design the circuit by finding the value for the capacitor, C and the line voltage Vpri(rms) to the circuit to produce the output as shown in Figure Q1(b).
Can someone please provide a step by step solution? Thank you! The full wave rectifier in the circuit below is to deliver 0.25A and 15V (peak) to a load. The ripple is to be no larger than 0.4 V peak-to-peak. The input signal is 120 V (rms) at 60 Hz. Assume V(lambda) = 0.7 V . Determine the required turns ratio, the filter capacitance, and the diode PIV rating.
Determine minimum and maximum input voltages required for proper regulation to be performed by a Zener diode when connected across a variable input voltage. Assume Izk = 1.0mA, Izm = 120mA, Vz = 10V and series current limiting resistor Rs = 5602. Draw circuit diagram and plot graph for reverse V-I characteristic and label proper values on graph.
Q2) Explain the working of zener diode on both forward and reverse bias. From the circuit in the Figure-2, Rs=1KO, Vz=7.2V and RL=3KN. If Vs = 12V. Find out the following DC parameters: a) Is = ?, Current passing through resistor Rs b) IL = ?, Current passing through resistor RL c) Iz = ?, Current passing through Zener Diode d) VL= ?, Output Voltage (Figure-2) Rs 1k Ohm Is Iz RL VL Vs UA723_ZD2 .3k Ohm 12 V
Two identical Schottky diodes are connected in series, one in the forward and the other in reverse direction, see figure. Assume the reverse saturation current, IS, of each diode to be known. Derive he current-voltage curve I(V) of this circuit. Plot it with the ratio I / IS on the y-axis and V / Vth on the x-axis. Make sure to cover a broad range of voltages, say, from –10 Vth to 10 Vth.
4. If the diode is open in the circuit, the load voltage is? 5. If the resistor is ungrounded in the circuit, the voltage measured with a DMM between the top of the resistor and ground is closest to? 6. The load voltage measures 12 V in the circuit. The trouble may be? 7. Using the third approximation in the circuit, how low must R, be before the diode's bulk resistance must be considered? + Vs RL 1 k2 12 V Figure
An ac voltage of peak value 20v is connected in series with a silicon diode and load resistance of 5002. if the forward resistance of diode is 102 find: i- Peak current through diode. ii- Peak output voltage. ii- What will be these values if the diode is assumed to be ideal (Vdiode =0)?