Con siderOm= 4. SSV and n ty pe silicon doped to No = 10" cm? at Sook. GivenNc csi)=28X10'9 Cm? and X = 4.01, Calculate;in) the depletion width♡ the maximum junction electric field.a contact between tung sten with work f unction%3D%3D

Given: ϕm=4.55V N=1016cm-1 T=300K x=4.01

ton sider Dm= 4. SSV and n type silicon doped to No = 10" cm? at Sook. Given Nc csi)=28x1019 cm? and x =4.01, Calculate į ) the depletion width v) the a contact between tung sten with work f unction %3D maximum junction electric field.

ton sider Dm= 4. SSV and n type silicon doped to No = 10" cm? at Sook. Given Nc csi)=28x1019 cm? and x =4.01, Calculate į ) the depletion width v) the a contact between tung sten with work f unction %3D maximum junction electric field.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Con sider
Om= 4. SSV and n ty pe silicon doped to No = 10" cm? at Sook. Given
Nc csi)=28X10'9 Cm? and X = 4.01, Calculate;
in) the depletion width
♡ the maximum junction electric field.
a contact between tung sten with work f unction
%3D
%3D

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