*9.67 For the current mirror in Fig. P9.67, derive an expres- sion for the current transfer function I,(s)/I;(s) taking into account the BJT internal capacitances and neglecting r ro. Assume the BJTS to be identical. Observe that a signal ground appears at the collector of Q,. If the mirror is biased at 1 mA and the BJTS at this operating point are characterized by fr cies of the pole and zero of the transfer function. and 400 MHz, C, = 2 pF, and Bo = = o, find the frequen- Vcc

*9.67 For the current mirror in Fig. P9.67, derive an expres- sion for the current transfer function I,(s)/I;(s) taking into account the BJT internal capacitances and neglecting r ro. Assume the BJTS to be identical. Observe that a signal ground appears at the collector of Q,. If the mirror is biased at 1 mA and the BJTS at this operating point are characterized by fr cies of the pole and zero of the transfer function. and 400 MHz, C, = 2 pF, and Bo = = o, find the frequen- Vcc

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Current and impedance levels of push-pull RF amplifier. Solid-state RF power amplifiers that provide more than 50 W or so must deal with very large currents, because the typical silicon RF BJT or PET cannot with-stand a DC collector voltage higher than about 40V. (Newer devices using materials such as silicon carbide can exceed this voltage limitation and provide greater power for the same current level.) Suppose a push-pull RF amplifier using a DC collector voltage of 36 V must provide a total peak RF output power of 200W. Typically, the AC "swing" (peak-to-peak AC excursion) of voltage at the collectors cannot exceed twice the DC power-supply voltage. (a) If each of the two devices in the push-pull amplifier delivers IOOW and has a peak-to-peak voltage of (2 x 36) = 72 V across its output terminals , what is the peak current I at the collector of each device, assuming . "d C(PK) smus01 al voltage and current? (b) At this current IC<PK >' how much series inductance L at a…
Current and impedance levels of push-pull RF amplifier. Solid-state RF power amplifiers that provide more than 50 W or so must deal with very large currents, because the typical silicon RF BJT or FET cannot with- stand a DC collector voltage higher than about 40V. (Newer devices using materials such as silicon carbide can exceed this voltage limitation and provide greater power for the same current level.) Suppose a push- pull RF amplifier using a DC collector voltage of 36V must provide a total peak RF output power of 200 W. Typically, the AC "swing" (peak- to-peak AC excursion) of voltage at the collectors cannot exceed twice the DC power-supply voltage. (a) If each of the two devices in the push-pull amplifier delivers 100 W and has a peak-to-peak voltage of (2x36)=72V across its output terminals, what is the peak current ICPK) at the collector of each device, assuming sinusoidal voltage and current? (b) At this current Icery how much series inductance L at a frequency of f=30MHz…
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The problem are DC analysis problems. For each of the circuits verify the mode of operation and solve for all applicable DC voltages and currents. > When you "verify" a mode of operation you will need to calculate all three voltages (Vc, V8, VE for BJTS and VG, Vs, Vo for MOSFETS) and show the correct two conditions are satisfied. > Assume Capacitors acts like open circuits at DC and short circuits for AC. > Assume the following: o Beta = 100 O VBE = 0.7 o V (Thermal) = 26 mV o V (Threshold) = 2V O VA = - !! For MOSFET saturation mode: assume Ip = K(VGs-Vr)? (Assume K = 10 mA/V?). 12V R2 >2kn R1 10kn R4 (R3
The problem are DC analysis problems. For each of the circuits verify the mode of operation and solve for all applicable DC voltages and currents. > When you "verify" a mode of operation you will need to calculate all three voltages (Vc, Ve, VE for BJTS and VG, Vs, Vp for MOSFETS) and show the correct two conditions are satisfied. > Assume Capacitors acts like open circuits at DC and short circuits for AC. > Assume the following: o Beta = 100 O VBE = 0.7 o V: (Thermal) = 26 mV o V (Threshold) = 2V O VA = - o For MOSFET saturation mode: assume lp = K(Ves-Vr)? • (Assume K = 10 mA/V2). %3! 5V 1kn C2 2kn >10kn (C3 4mA -5V
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The problem are DC analysis problems. For each of the circuits verify the mode of operation and solve for all applicable DC voltages and currents. When you "verify" a mode of operation you will need to calculate all three voltages (Vc, V8, VẸ for BJTS and VG, Vs, Vp for MOSFETS) and show the correct two conditions are satisfied. Assume Capacitors acts like open circuits at DC and short circuits for AC. Assume the following: o Beta = 100 o VBE = 0.7 o V: (Thermal) = 26 mV o Vr (Threshold) = 2V O VA = -- %3! o For MOSFET saturation mode: assume I, = K(VGs-V+)? • (Assume K = 10 mA/V?). 5V R1 3000 R2 1kn
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