8. A P-N junction diode has a. Low forward and high reverse resistance b. A non-linear V-I characteristics c. Zero forward current till the forward voltage reaches cut in value d. All of the above _ 9. N-type semiconductors: a. Are negatively charged b. Are produced when indium is added as impurity to germanium c. Are produced when phosphorus is added as impurity to silicon d. None of the above 10. What best describes the circuit? a. Full-wave rectifier b. Half-wave rectifier с. Сipper d. Clamper 11. Determine Io2 a. 29.40 mA b. 30.30 mA c. 14.70 mA d. None of the above 12. A silicon diode in a half-wave rectifier has a barrier potential of 0.7V. This has the effect of: a. Reducing the peak output voltage by 0.7V b. Increasing the peak output voltage by 0.7V c. Reducing the peak input voltage by 0.7N d. No effect 13. The conduction band is closest to the valence band in: a. Semiconductors b. Conductors c. Insulators d. The distance is the same for all of the above 14. The concentration of minority carriers in a semiconductor depends mainly on: a. The extent of doping b. Temperature c. The applied bias d. None of the above

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
icon
Related questions
Question

Answer all the items. Thanks!

 

8. A P-N junction diode has
a. Low forward and high reverse resistance
b. A non-linear V-I characteristics
c. Zero forward current till the forward voltage reaches cut in value
d. All of the above
9. N-type semiconductors:
a. Are negatively charged
b. Are produced when indium is added as impurity to germanium
c. Are produced when phosphorus is added as impurity to silicon
d. None of the above
10. What best describes the circuit?
voltage
a. Full-wave rectifier
b. Half-wave rectifier
c. Clipper
d. Clamper
11. Determine Ip2
R1
0.33kO
10 V
Ge
a. 29.40 mA
b. 30.30 mA
с. 14.70 mA
d. None of the above
12. A silicon diode in a half-wave rectifier has a barrier potential of 0.7V. This has the
effect of:
a. Reducing the peak output voltage by 0.7V
b. Increasing the peak output voltage by 0.7V
c. Reducing the peak input voltage by 0.7V
d. No effect
13. The conduction band is closest to the valence band in:
a. Semiconductors
b. Conductors
c. Insulators
d. The distance is the same for all of the above
14. The concentration of minority carriers in a semiconductor depends mainly on:
a. The extent of doping
b. Temperature
c. The applied bias
d. None of the above
Transcribed Image Text:8. A P-N junction diode has a. Low forward and high reverse resistance b. A non-linear V-I characteristics c. Zero forward current till the forward voltage reaches cut in value d. All of the above 9. N-type semiconductors: a. Are negatively charged b. Are produced when indium is added as impurity to germanium c. Are produced when phosphorus is added as impurity to silicon d. None of the above 10. What best describes the circuit? voltage a. Full-wave rectifier b. Half-wave rectifier c. Clipper d. Clamper 11. Determine Ip2 R1 0.33kO 10 V Ge a. 29.40 mA b. 30.30 mA с. 14.70 mA d. None of the above 12. A silicon diode in a half-wave rectifier has a barrier potential of 0.7V. This has the effect of: a. Reducing the peak output voltage by 0.7V b. Increasing the peak output voltage by 0.7V c. Reducing the peak input voltage by 0.7V d. No effect 13. The conduction band is closest to the valence band in: a. Semiconductors b. Conductors c. Insulators d. The distance is the same for all of the above 14. The concentration of minority carriers in a semiconductor depends mainly on: a. The extent of doping b. Temperature c. The applied bias d. None of the above
Expert Solution
steps

Step by step

Solved in 2 steps

Blurred answer
Knowledge Booster
Analog to digital converters
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Similar questions
  • SEE MORE QUESTIONS
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,