8. A P-N junction diode has a. Low forward and high reverse resistance b. A non-linear V-I characteristics c. Zero forward current till the forward voltage reaches cut in value d. All of the above _ 9. N-type semiconductors: a. Are negatively charged b. Are produced when indium is added as impurity to germanium c. Are produced when phosphorus is added as impurity to silicon d. None of the above 10. What best describes the circuit? a. Full-wave rectifier b. Half-wave rectifier с. Сipper d. Clamper 11. Determine Io2 a. 29.40 mA b. 30.30 mA c. 14.70 mA d. None of the above 12. A silicon diode in a half-wave rectifier has a barrier potential of 0.7V. This has the effect of: a. Reducing the peak output voltage by 0.7V b. Increasing the peak output voltage by 0.7V c. Reducing the peak input voltage by 0.7N d. No effect 13. The conduction band is closest to the valence band in: a. Semiconductors b. Conductors c. Insulators d. The distance is the same for all of the above 14. The concentration of minority carriers in a semiconductor depends mainly on: a. The extent of doping b. Temperature c. The applied bias d. None of the above
8. A P-N junction diode has a. Low forward and high reverse resistance b. A non-linear V-I characteristics c. Zero forward current till the forward voltage reaches cut in value d. All of the above _ 9. N-type semiconductors: a. Are negatively charged b. Are produced when indium is added as impurity to germanium c. Are produced when phosphorus is added as impurity to silicon d. None of the above 10. What best describes the circuit? a. Full-wave rectifier b. Half-wave rectifier с. Сipper d. Clamper 11. Determine Io2 a. 29.40 mA b. 30.30 mA c. 14.70 mA d. None of the above 12. A silicon diode in a half-wave rectifier has a barrier potential of 0.7V. This has the effect of: a. Reducing the peak output voltage by 0.7V b. Increasing the peak output voltage by 0.7V c. Reducing the peak input voltage by 0.7N d. No effect 13. The conduction band is closest to the valence band in: a. Semiconductors b. Conductors c. Insulators d. The distance is the same for all of the above 14. The concentration of minority carriers in a semiconductor depends mainly on: a. The extent of doping b. Temperature c. The applied bias d. None of the above
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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