Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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- What is going to happen for the depletion region if the P-type material has more doping in the PN-junction?arrow_forward(1-5) The mobilites of free electrons and holes in pure Germanium are 0.33 and 0.18m/v-s corresponding values for pure silicon are 0.13 and 0.05 m/v-s respectively. intrinsic conductivity for both the materials Assume n=2.5x 10m for Silicon at room temperature. (1-6) Calculate the donor corcentertion in N-type Germanium having resistivity of 100 q=1.6x 10" c and pa 0.36m/v-s. the Find the values of 10"/m for Germanium and ni=1.5x Sam takearrow_forward6) You work as an engineer in a company and you have been given the assignment of measuring the electrical conductivity and the band gap (Eg) of a new intrinsic semiconductor material at 20 and 100 °C. You cut this material in the form of a rectangular prism with a length of 30 cm, a width of 1 cm and a thickness of 2 cm, and you applied a potential difference of 1 V by placing electrodes on the faces shown in the figure. In this case, you measure a current of 0.8A at 20 °C and 12A at 100 °C. According to this information a) calculate the electrical conductivity of the material at 20 and 100 °C and b) the band gap of this material. 30 ст 2 ст 1 cmarrow_forward
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