5. This problem concerns a junction with a heavily doped n-type region, a thin intrinsic layer, and a moderately doped p-type region as sketched below. Assume the depletion approximation and assume that the width of the depletion region on the P-side is significantly greater than the thickness of the intrinsic layer. No=10¹8 D ND-NA Intrinsic layer N₁=10¹5 (a) Sketch the electric field vs. position assuming the depletion approximation. (b) Using the sketch in (a), develop an expression for the depletion layer width in the pregion. Your answer should be in terms of Vыi and NĄ. (c) Compare this structure to the same structure without the intrinsic layer. Explain what effect the intrinsic layer will have on the built-in potential, Vòi. (d) Compare this structure to the same structure without the intrinsic layer. Explain what effect the intrinsic layer will have on the maximum electric field in the junction.

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5. This problem concerns a junction with a heavily doped n-type region, a thin intrinsic
layer, and a moderately doped p-type region as sketched below. Assume the depletion
approximation and assume that the width of the depletion region on the P-side is
significantly greater than the thickness of the intrinsic layer.
N₁-N₁
No=10¹8
D
Intrinsic layer
N₁ = 10¹⁹
(a) Sketch the electric field vs. position assuming the depletion approximation. (b)
Using the sketch in (a), develop an expression for the depletion layer width in the
pregion. Your answer should be in terms of Vbi and NĄ.
(c) Compare this structure to the same structure without the intrinsic layer. Explain
what effect the intrinsic layer will have on the built-in potential, Vbi.
(d)
Compare this structure to the same structure without the intrinsic layer. Explain
what effect the intrinsic layer will have on the maximum electric field in the junction.
Transcribed Image Text:5. This problem concerns a junction with a heavily doped n-type region, a thin intrinsic layer, and a moderately doped p-type region as sketched below. Assume the depletion approximation and assume that the width of the depletion region on the P-side is significantly greater than the thickness of the intrinsic layer. N₁-N₁ No=10¹8 D Intrinsic layer N₁ = 10¹⁹ (a) Sketch the electric field vs. position assuming the depletion approximation. (b) Using the sketch in (a), develop an expression for the depletion layer width in the pregion. Your answer should be in terms of Vbi and NĄ. (c) Compare this structure to the same structure without the intrinsic layer. Explain what effect the intrinsic layer will have on the built-in potential, Vbi. (d) Compare this structure to the same structure without the intrinsic layer. Explain what effect the intrinsic layer will have on the maximum electric field in the junction.
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