5. This problem concerns a junction with a heavily doped n-type region, a thin intrinsic layer, and a moderately doped p-type region as sketched below. Assume the depletion approximation and assume that the width of the depletion region on the P-side is significantly greater than the thickness of the intrinsic layer. No=10¹8 D ND-NA Intrinsic layer N₁=10¹5 (a) Sketch the electric field vs. position assuming the depletion approximation. (b) Using the sketch in (a), develop an expression for the depletion layer width in the pregion. Your answer should be in terms of Vыi and NĄ. (c) Compare this structure to the same structure without the intrinsic layer. Explain what effect the intrinsic layer will have on the built-in potential, Vòi. (d) Compare this structure to the same structure without the intrinsic layer. Explain what effect the intrinsic layer will have on the maximum electric field in the junction.

Z=0

A germanium pn junction diode was fabricated on a wafer with doping concentration of 7.8 x 105 cm3. The p-region was created by doping 1018 cm using ion-implantation. Compute the following: barrier potential ii. i. depletion width at the junction. If this diode has saturation current Io-15 nA at 300 K, what is the diode current if potential across the diode is 0.8 V (n=1). 111.

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