5. A p-silicon material of dimension 25 µm has 1 volt across it. The material has po = Na = 5×107cm3 at T= 280 °K, µn = 1500 cm²/V-s, µp = 500 cm²/V-s.a) What is the electric field [V/cm]?b) What is the electron carrier density, no? [cm³]c) What is the current density, J [A/cm²]?d) What is the current density, J, in units of [µA/µm²]?%3D

Answered: Image /qna-images/answer/1ad58ecc-8e2a-4f53-9438-b9275628ef48.jpg

Answered: 5. A p-silicon material of dimension 25…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Consider a material where the probability of a hole occupying a state in the middle of the valence band at room temperature is 0.7, what type of material is this? O An insulator O A conductor There is no enough information to determine the nature of the material O A semiconductor
A picce of p-type silicon with a cross section of I mm x 1 mm and length of 10 mm has i resistivity of 10 0-m at 27°C. Ohmic contacts are fabricated on the surfaces at either end of the longest dimensions of the bar and a DC voltage of 10V is applied, Assuming a hole mobility uh -0.03 m/V-s, calculate: The impurity concentration The velocity of the carriers through the bar The time taken for carriers to transverse across the bar The magnitude of the current in bar iv)
Question 2: a. [Pl-1.c] The following graph presents two curves corresponding to Fermi functions of a material at two different temperatures. Knowing that T, is higher than T., specify which temperature correspond to which curve. Explain your answer. P 02 Curve 1 Curve 2 C4 The Fermi Function CA
A gallium arsenide semiconductor at T = 300 K is doped with impurity concentration N The mobility µ, is 7500 cm²/V – s. For an applied field of 10 V /cm the drift current density is 1016 cm %3D
1. A Germanium sample is 5 mm long and has a rectangular cross-section, 50 μm by 150 μm. A Phosphorus atom with concentration of 4.4 x 10¹5/cm³ at 300 K is added and corresponds to one impurity atom for 107 Ge atoms. A steady current of 3 juA exists in the bar. a. Set up the equations for concentrations, conductivity, resistance, and voltage. b. Solve for the electron and hole concentration, conductivity, resistance, and voltage. 2. A basic junction diode is operating at a room temperature of 25°C and has a reverse current of 1 nA. a. Set up the different diode equations. b. Solve for the diode current at room temperature, reverse current, and threshold voltage when the temperature becomes 72°C.
the electron and hole mobilities in silicon at 320 K are 0.13 and 0.029, and assuming hole and electron charge densities are 0.0033 C/m ³ and -0.0033 C/m ³, 3 :respectively, find the component of the conductivity due (a) ;to holes the component of the conductivity due (b) ;to electrons .the conductivity (c)
A one cm3 sample of a hypothetical material with conductivity of 108 (Ohm-meter) 1 is formed into a 10 cm wire. The material contains 1022 atoms per cm3. Calculate the electron drift velocity when the wire carries an electrical potential of 100 V.
Solve the question with complete solution.Use the conversion 1 Coulomb = 6.25E10^18 e- or p+, read as 1 Coulomb is equal to 6.25 times 10 raised to 18 no. of electrons or protons. For exponents, follow "E10^".
Q4/ Find the conductivity of Si that is doped with 2 parts per 108 of donor impurity. Given that there are 5 x 1028 m Si atoms Hn = 0.13 and V. Sec Hp = 0.05 V. Sec

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