Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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- Given that mu n = 1350 cm/V.S, Mp 480 cm²/V.s and q = 1.6 x 10-19 C A) A potential difference of 2 V is applied across the 2 ends of an n-type piece of silicon of length 10 um . Calculate the velocity of electrons and holes in this material.arrow_forwardExercises 1. A silicon p-n junction has the hole and electron resistivity are 0.001 .m, 0.004 .m respectively in T-250 °K. The intrinsic carrier density is 6.2×10¹0 m³, the electron and hole diffusion length are 1.8×104 m, 1.1×104 m respectively, and th=8 µs. Find reverse saturation current density. 2. Given a Si diode with the following physical ch/s the doping concentration in the p-type is 2.25×10¹7 cm³ and in the n-type is 2.25×10¹4 cm³, junction area is 2×10³ cm², life time of hole in n-region=10 µs, life time of electron in p-region =50 µs, hole and electron mobilities are 600 cm³V's¹ and 2100 cm²V¹s¹ respectively, the intrinsic carrier concentration is 1.4x100 cm³ and the voltage is 0.66 v operation at room temperature. Calculate Jp(0) and Jn(0) then calculate the total diode current. 3. A silicon p-n junction has energy of C.B. and V.B. are 0.9 eV, 0.1 eV respectively at 200 K. the hole and electron mobility, resistivity are 0.16 m²/V.s, 0.36 m²/V.s, 0.0025 92.m and 0.005 2.m.…arrow_forwardZ=0arrow_forward
- A constant diffusion current of electrons is established through a silicon semiconductor material. The value of current density is Jn= –0.8 A/cm2. The electron concentration at x=0 is n(0)=1.5x1015 cm–3. The diffusion constant of electrons and holes are 35 and 14 cm2/s, respectively . Determine the hole drift current densityarrow_forwardDraw the schematic diagram showing the energy level alignment of metal-semiconductor and semiconductor-semiconductor junctions after contact under thermal equilibrium for the following cases. Note P = work function % = electron affinity EG = band gap Ec = conduction band Ey = valence band EF = fermi level 1. semiconductor EVAC Metal Os Xs Ec Egs ErM Ey Before contact 2. semiconductor EVAC Metal Xs OM Ec EyM Eps Ey Before contact 3. semiconductor EVAC Metal OM Ec EFM Eps Ev Before contact Electron energy Electron energy Electron energyarrow_forward3-At a temperatures near room temperature, the temperature dependence of the conductivity for intrinsic germanium is found to be given by: 6= CT2 exp(- Eg /2KT) where C is a temperature-independent constant and T is in Kelvin., calculate the intrinsic electrical conductivity of germanium at 185° C.arrow_forward
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