14 Determine the Q point and operating region forthe MOSFET in the circuit of Figure P11.13(b).Vcc = 7 V; Vpp = 20 V; Vr = 3 V; K = 50 mA/V?;Rp = 5 2. RpVGDVas -s

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Answered: 14 Determine the Q point and operating…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Example 13 The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30 mA. Determine VGs at this current level if k = 0.06 × 10-3 A/V² and VȚ is the maxi- mum value.
Design the following MOSFET circuit for it to operate in saturation mode with 0.5 mA drain current. Determine Rp and dc voltage VĎ. Assume V₁ = 2 V and K = 0.1 mA/V² for this MOSFET. 10 V RD -VD
d. The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30 mA. Determine VGS at this current level if k = 0.06 x 103 A/V? and VT is the maximum value.
Qa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. )
For the Enhancement-type MOSFET in following figure, 1.Determine IDQ and VGSQ
A Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.
The maximum drain current for the n-channel enrichment type MOSFET is 30 mA.Determine VGS with this current level if k= 0.06x10-3 A/V2 and VT is the maximum value.
An n-type MOSFET has a turn-on voltage of VTO=0.6V and is operated at a gate-source voltage of 1V. The drain-source voltage is also 1V. In what region is the MOSFET operating? a. Saturation region b. None of the above c. Triode region O d. Ohmic region
Q2. a) Define and describe the Q-point, DC load-line, and AC load-line. b) Is a JFET a voltage controlled or current controlled device? c) What are the roles of the resistor Rs and Rp in a JFET bias circuit?
(a)(i) State three differences between the Field Effect Transistor (FET) and the Bipolar JunctionTransistor (BJT). (ii) Draw the physical structure and device symbol for an n-channel JFET. (iii) What is meant by drain characteristics (b) Determine the drain current of an n-channel JFET having pinch-off voltage VP = - 4 and drain-source saturation current IDSS=12mA at the following gate-source voltages(i) VGS= 0V(ii) VGS= -2V (c) Calculate the transconductance, gm of a JFET having specified values of IDSS=12mA and VP= - 4V at bias points(i) VGS= 0V and(ii) VGS= -1.5V.
An n-channel JFET has a drain-source saturation current IDSS = 10 mA and a gate-source pinch-off voltage of -4 volts. If the drain current is 2.5 mA, calculate the gate-source voltage, VGS.
Briefly explain how the current flow is enabled in a p-Type MOSFET. Include the direction of current flow and mention the role of the source, drain, and gate.

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14 Determine the Q point and operating region for the MOSFET in the circuit of Figure P11.13(b). Vcc = 7 V; Vpp = 20 V; Vr = 3 V; K = 50 mA/V?; Rp = 5 2. Rp VGD Vas -s