1. For the circuit of Figure 9-1, if B 150, then Is is (a) 10 µA (c) 20 µA 2. If B of the transistor in the circuit of Figure 9-1 increases, then (a) IB decreases (c) VCE decreases 3. If RB is made smaller in the circuit of Figure 9-1, then (a) Ig decreases (c) VCE decreases 4. The collector saturation current for the circuit of Figure 9-1 is approximately (a) 4 mA 5. At cutoff, the collector-to-emitter voltage for the circuit of Fig- ure 9-1 is (a) 5 V (b) 15 µA (d) 25 µA (b) Ic increases (d) all of the above (b) Ic decreases (d) all of the above (b) 6 mA (c) 10 mA (d) 15 mA (b) 7.5 V (c) 10 V (d) 15 V

Set up a midpoint bias for a JFET with IDSS = 14 mA and VGS(off) = -10 V. Use a 24 V dc source as the supply voltage. Show the circuit and resistor values. Indicate the value of ID. Indicate the value of VGS. Indicate the value of VDS.

1) AC power in a load can be controlled by using a. Two SCR's in parallel opposition b. Two SCR's in series c. Three SCR's in series d. Four SCR's in series 2) The advantage of using free - wheeling diode in half controlled bridge converter is that a. There is always a path for the ac current independent of the ac line b. There is always a path for the dc current independent of the ac line c. There is always a path for the dc current dependent of the ac line d. There is always a path for the ac current dependent of the ac line 3) Silicon controlled rectifier can be turned on a. By applying a gate pulse and turned off only when current becomes zero b. And turned off by applying gate pulse c. By applying a gate pulse and turned off by removing the gate pulse d. By making current non zero and turned off by making current zero

Helli. I only need the last part. Plotting power vs voltage if used as a solar cell and give the definition of  fill factor. Tnx