Introduction To Quantum Mechanics
3rd Edition
ISBN: 9781107189638
Author: Griffiths, David J., Schroeter, Darrell F.
Publisher: Cambridge University Press
expand_more
expand_more
format_list_bulleted
Question
Chapter 9.2, Problem 9.5P
To determine
The expression for the tunneling probability in terms of
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
a)
for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?)
Explain qualitatively the differences in intrinsic carrier concentrations
b) Explain qualitatively why ni increases with increasing temperature.
1500
T(*C)
1019
1000 500
200 100
27
List of band gaps of semiconductor materials.
1018
Band g
@ 302
Group Material
Symbol
1017
IV
Diamond
5.5
Ge
IV
Silicon
Si
1.11
1016
IV
Germanium
Ge
0.67
IlI-V
Gallium(II) nitride
GaN
3.4
1015
III-V
Gallium(III) phosphide GaP
2.26
III-V
Gallium(III) arsenide
GaAs
1.43
Si
1014
IV-V
Silicon nitride
Si,N,
5.
IV-VI
Lead(II) sulfide
PbS
0.37
1013
IV-VI
Silicon dioxide
SiO2
Copper(1) oxide
2.1
MAIM
1012
1011
1010
GaAS
109
108
107
106
0.5 1.0 1.5 2.0 2.5 3.0
1000/T(K )
Intrinsic carrier density n; (cm3)
An n-type semiconductor material, which contains
the 1016 electrons/cm³ and the charge carrier
mobility is 1100 cm²/Vs.
(i) Determine
resistivity of the n-type semiconductor
material.
the conductivity and the
(ii) Determine the diffusion coefficient at room
temperature.
(iii) Evaluate the Einstein relation for the
majority charge carrier in n-type material.
Consider the topic light-matter interaction. (a) Explain the concepts of absorption and (b) emission (spontaneous and stimulated) of a photon by a semiconductor by using the energy-band diagrams. (c) Give examples of devices working with these principles.
Chapter 9 Solutions
Introduction To Quantum Mechanics
Knowledge Booster
Similar questions
- Q. 2. In a P-N junction diode, width of depletion layer is 0· 54m and potential barrier is 0-5V. Calculate the barrier electric field.arrow_forwardAn LED emits light with a wavelength of 500 nm (500x10-9m). What is the band gap energy in electron Volts? Hint: recall Eq. (2) and 1 eV= 1.6 x10-19 J 1.2 eV 2.5 eV 3.3 eV 4.1 eV 5.5 eVarrow_forwardQ2. Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in Si is D = 6.5 x 10-11 mm2/s at a temperature of 950°C. Assume the source provides a surface concentration of 1020 atoms/cm3 and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 1018 atoms/cm3.arrow_forward
- A semiconductor Hall probe has a Hall coefficient (RH) of -3.75 x 105 m³/C in the temperature range of 130 K and 350 K. Its electrical conductivity is 150 (2.m)-¹. A. Deduce, with explanation, the type of carriers in the semiconductor B. Calculate the density and mobility of the charge carriers C. Give 2 examples of Hall probe application and 2 material fabrication methods for Hall effect proves.arrow_forwardQ#02. Answer the followings: (a) Elucidate the salient features of reciprocal lattice and how does it help to investigate the crystal structures. (b) What do you mean by Brillion zone and how it is related to the reciprocal space? (c) Write the salient features of the powder crystal method to determine crystal structure.arrow_forwardd) A difference amplifier circuit is shown in Figure 4.1. What is the role of the transistor T3 in this circuit? Now with reference to transistors T1 and T2 explain why when arbitrary input signals (Input 1 and Input 2) are applied what happens to their common signal and difference signal elements. Define its key figure of merit the CMRR? Output 1 Input 1 T₁ RB1 www RB2 +Vcc Rc1 T3 Rcz -0.7 V RE -VEE Figure 4.1 T₂ Output 2 Input 2arrow_forward
- For Ge semiconductor, assume the Fermi energy level is 0.1 eV below the conduction band energy Ec. Let the absolute temperature T for items i and ii be 200 K. i. Find the number of quantum states between Ec and Ec +0.1x4.6xkbT. ii.Determine the probability of a state being empty of an electron at Ec+0.1x4.6x kbT. ii. Find the temperature at which there is an electron at the state Ec+0.01x4.6x kbT with probability 30%. iv. Repeat item iii by using the Boltzmann approximation rather than the Fermi-Dirac distribution. v. Find the difference in temperature between items iii and iv above and express this difference as percentage.arrow_forward. When UV photons with 380 nm wavelength strike on a semiconductor, a red photon emission from the semiconductor is observed. Explain the photon emission process in this semiconductor on the band diagram.arrow_forwardQ2: Specimen of semiconductor with size of (1*2*1)mm has electrical resistance of (21602) at room temperature. Calculate the numbers of charge carriers that act to electrical conduction if you know that the mobility of electrons and holes are 3900, and 1900 (cm/V.sec), respectively? Determine if this sample is intrinsic or extrinsic? What is the difference between them with sketch?arrow_forward
- A ALAS semiconductor crystal has a lattice constant of a = 0.13 nm, the volume density of As atoms in this crystal will be: O 3.641e24 /cm^3 2.048e30 /cm^3 O 1.821e24 /cm^3 O 3.550e16 /cm^3 O 1.593e24 /cm^3arrow_forwardAt room temperature (300 K) with the Fermi level located exactly in the middle of the bandgap, if the probability that a state is filled is 0.03, then the probability that a state is empty is.... * 1- 0.03 0.03 1 - 0.03 other: Other:arrow_forwardK: Estimate the ratio of the electron densities in the conduction bands of silicon (Eg 1.14 eV) and gallium arsenide (Eg = 1.42 eV) at 400 K.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- College PhysicsPhysicsISBN:9781305952300Author:Raymond A. Serway, Chris VuillePublisher:Cengage LearningUniversity Physics (14th Edition)PhysicsISBN:9780133969290Author:Hugh D. Young, Roger A. FreedmanPublisher:PEARSONIntroduction To Quantum MechanicsPhysicsISBN:9781107189638Author:Griffiths, David J., Schroeter, Darrell F.Publisher:Cambridge University Press
- Physics for Scientists and EngineersPhysicsISBN:9781337553278Author:Raymond A. Serway, John W. JewettPublisher:Cengage LearningLecture- Tutorials for Introductory AstronomyPhysicsISBN:9780321820464Author:Edward E. Prather, Tim P. Slater, Jeff P. Adams, Gina BrissendenPublisher:Addison-WesleyCollege Physics: A Strategic Approach (4th Editio...PhysicsISBN:9780134609034Author:Randall D. Knight (Professor Emeritus), Brian Jones, Stuart FieldPublisher:PEARSON
College Physics
Physics
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Cengage Learning
University Physics (14th Edition)
Physics
ISBN:9780133969290
Author:Hugh D. Young, Roger A. Freedman
Publisher:PEARSON
Introduction To Quantum Mechanics
Physics
ISBN:9781107189638
Author:Griffiths, David J., Schroeter, Darrell F.
Publisher:Cambridge University Press
Physics for Scientists and Engineers
Physics
ISBN:9781337553278
Author:Raymond A. Serway, John W. Jewett
Publisher:Cengage Learning
Lecture- Tutorials for Introductory Astronomy
Physics
ISBN:9780321820464
Author:Edward E. Prather, Tim P. Slater, Jeff P. Adams, Gina Brissenden
Publisher:Addison-Wesley
College Physics: A Strategic Approach (4th Editio...
Physics
ISBN:9780134609034
Author:Randall D. Knight (Professor Emeritus), Brian Jones, Stuart Field
Publisher:PEARSON